JPS6484738A - Bump formation - Google Patents
Bump formationInfo
- Publication number
- JPS6484738A JPS6484738A JP24335387A JP24335387A JPS6484738A JP S6484738 A JPS6484738 A JP S6484738A JP 24335387 A JP24335387 A JP 24335387A JP 24335387 A JP24335387 A JP 24335387A JP S6484738 A JPS6484738 A JP S6484738A
- Authority
- JP
- Japan
- Prior art keywords
- ultra
- fine particles
- bump
- spraying
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Wire Bonding (AREA)
Abstract
PURPOSE:To obtain a semiconductor with bumps by using a simple apparatus and the minimum amount of materials at a low cost, by spraying from a nozzle ultra-fine particles having a specific particle size which are in a state of floating in a gas and forming each bump consisting of the ultra-fine particles on a pad of the semiconductor element. CONSTITUTION:A bump 5 consisting of ultra-fine particles is formed on a pad 2 of a semiconductor element 1 by spraying from a nozzle 3 the ultra-fine particles having each particle size 0.1mum or smaller which are in a state of floating in a gas. For example, when an Au bump is formed, Au atoms which are vaporized by evaporating a mass of Au in an evaporating chamber while putting inactive gases such as helium or argon and the like in its chamber collide with gaseous molecules and are rapidly cooled and are condensed by cooling to form Au ultra-fine particles consisting of each particle size 0.1mum or smaller of Au. The Au ultra-fine particles are introduced from the direction of the allow as shown in Fig. and each bump 5, 1-20mum in thickness, is formed by spraying the particulates from the nozzle 3 on each pad 2 on an LSI 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24335387A JPS6484738A (en) | 1987-09-28 | 1987-09-28 | Bump formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24335387A JPS6484738A (en) | 1987-09-28 | 1987-09-28 | Bump formation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6484738A true JPS6484738A (en) | 1989-03-30 |
Family
ID=17102572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24335387A Pending JPS6484738A (en) | 1987-09-28 | 1987-09-28 | Bump formation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6484738A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0797247A1 (en) * | 1996-03-21 | 1997-09-24 | Matsushita Electric Industrial Co., Ltd | Substrate on which bumps are formed and method of forming the same |
DE10113497A1 (en) * | 2001-03-20 | 2002-06-06 | Infineon Technologies Ag | Production of an integrated circuit used in the semiconductor industry comprises preparing a circuit substrate, forming bumps on the substrate, and providing metallized strips |
WO2007114314A1 (en) * | 2006-03-30 | 2007-10-11 | Kabushiki Kaisha Mikuni Kogyo | Method of forming minute metal bump |
-
1987
- 1987-09-28 JP JP24335387A patent/JPS6484738A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0797247A1 (en) * | 1996-03-21 | 1997-09-24 | Matsushita Electric Industrial Co., Ltd | Substrate on which bumps are formed and method of forming the same |
US5914274A (en) * | 1996-03-21 | 1999-06-22 | Matsushita Electric Industrial Co., Ltd. | Substrate on which bumps are formed and method of forming the same |
US6042953A (en) * | 1996-03-21 | 2000-03-28 | Matsushita Electric Industrial Co., Ltd. | Substrate on which bumps are formed and method of forming the same |
KR100251677B1 (en) * | 1996-03-21 | 2000-04-15 | 모리시타 요이찌 | Bump forming body and forming method of bump |
DE10113497A1 (en) * | 2001-03-20 | 2002-06-06 | Infineon Technologies Ag | Production of an integrated circuit used in the semiconductor industry comprises preparing a circuit substrate, forming bumps on the substrate, and providing metallized strips |
WO2007114314A1 (en) * | 2006-03-30 | 2007-10-11 | Kabushiki Kaisha Mikuni Kogyo | Method of forming minute metal bump |
US7767574B2 (en) | 2006-03-30 | 2010-08-03 | Kabushiki Kaisha Mikuni Kogyo | Method of forming micro metal bump |
JP4826924B2 (en) * | 2006-03-30 | 2011-11-30 | 株式会社みくに工業 | Method for forming fine metal bumps |
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