JPS6482637A - Vapor phase epitaxy method - Google Patents

Vapor phase epitaxy method

Info

Publication number
JPS6482637A
JPS6482637A JP24170487A JP24170487A JPS6482637A JP S6482637 A JPS6482637 A JP S6482637A JP 24170487 A JP24170487 A JP 24170487A JP 24170487 A JP24170487 A JP 24170487A JP S6482637 A JPS6482637 A JP S6482637A
Authority
JP
Japan
Prior art keywords
gas
raw gas
tube
raw
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24170487A
Other languages
Japanese (ja)
Inventor
Kenji Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24170487A priority Critical patent/JPS6482637A/en
Publication of JPS6482637A publication Critical patent/JPS6482637A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent a raw gas from being condensed and decomposed, by forming a raw gas introduction tube in a multiple tube structure and introducing a raw gas different in its temperature. CONSTITUTION:A hydrogen gas is introduced as a carrier gas into an outer tube 13A of a second gas introduction tube 13 in a double tube structure, and mercury carried by a hydrogen gas is introduced as a second raw gas into its inner tube 13B. Then a temperature of the first raw gas inside the first gas introduction tube 12 is made 23 deg.C, and that of the mercury raw gas inside the introduction tube 13 is made 170 deg.C. The temperature of the gas introduced into the outer tube 13A is made 80 deg.C. Decomposition of the first raw gas and condensation of mercury carried by the second raw gas can be made removable in this way.
JP24170487A 1987-09-25 1987-09-25 Vapor phase epitaxy method Pending JPS6482637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24170487A JPS6482637A (en) 1987-09-25 1987-09-25 Vapor phase epitaxy method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24170487A JPS6482637A (en) 1987-09-25 1987-09-25 Vapor phase epitaxy method

Publications (1)

Publication Number Publication Date
JPS6482637A true JPS6482637A (en) 1989-03-28

Family

ID=17078288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24170487A Pending JPS6482637A (en) 1987-09-25 1987-09-25 Vapor phase epitaxy method

Country Status (1)

Country Link
JP (1) JPS6482637A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015510691A (en) * 2012-01-30 2015-04-09 クラッシック ダブリュビージー セミコンダクターズ エービーＣｌａｓｓｉｃ ＷＢＧ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＡＢ Silicon carbide crystal growth in a CVD reactor using a chlorination chemistry system.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015510691A (en) * 2012-01-30 2015-04-09 クラッシック ダブリュビージー セミコンダクターズ エービーＣｌａｓｓｉｃ ＷＢＧ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＡＢ Silicon carbide crystal growth in a CVD reactor using a chlorination chemistry system.

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