JPS6482388A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6482388A
JPS6482388A JP62237480A JP23748087A JPS6482388A JP S6482388 A JPS6482388 A JP S6482388A JP 62237480 A JP62237480 A JP 62237480A JP 23748087 A JP23748087 A JP 23748087A JP S6482388 A JPS6482388 A JP S6482388A
Authority
JP
Japan
Prior art keywords
semiconductor memory
volatile semiconductor
function
selecting
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62237480A
Other languages
Japanese (ja)
Inventor
Masao Furuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62237480A priority Critical patent/JPS6482388A/en
Publication of JPS6482388A publication Critical patent/JPS6482388A/en
Pending legal-status Critical Current

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  • Dram (AREA)

Abstract

PURPOSE:To change more than two types of different functions in the same semiconductor device by connecting a non-volatile semiconductor memory to an external connecting terminal and selecting the function. CONSTITUTION:The connecting point C of a non-volatile semiconductor memory element 1 which can be electrically rewritten and a high resistance element 2 is defined to be the input of the functional operation selecting circuit of a function circuit part 3. For instance, at the time of completing a production process, when the non-volatile semiconductor memory 1 is turned off, the connecting point C between the memory 1 and the high resistance element 2 is an earth voltage and the functional operation selecting input of the function circuit block 3 is set to a low level. When the non-volatile semiconductor memory 1 is rewritten from the off state to an on state, the functional operating selecting input goes to a high level. In such a way, >= two types different in function can be changed in the same semiconductor device.
JP62237480A 1987-09-24 1987-09-24 Semiconductor integrated circuit Pending JPS6482388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62237480A JPS6482388A (en) 1987-09-24 1987-09-24 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62237480A JPS6482388A (en) 1987-09-24 1987-09-24 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6482388A true JPS6482388A (en) 1989-03-28

Family

ID=17015951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62237480A Pending JPS6482388A (en) 1987-09-24 1987-09-24 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6482388A (en)

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