JPS6481949A - Agent for peeling photoresist - Google Patents
Agent for peeling photoresistInfo
- Publication number
- JPS6481949A JPS6481949A JP23896287A JP23896287A JPS6481949A JP S6481949 A JPS6481949 A JP S6481949A JP 23896287 A JP23896287 A JP 23896287A JP 23896287 A JP23896287 A JP 23896287A JP S6481949 A JPS6481949 A JP S6481949A
- Authority
- JP
- Japan
- Prior art keywords
- peeling
- agent
- water
- power
- aminoalcohols
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 abstract 6
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 abstract 4
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 3
- 150000001414 amino alcohols Chemical class 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 abstract 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 abstract 1
- 150000007529 inorganic bases Chemical class 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62238962A JPH0769618B2 (ja) | 1987-09-25 | 1987-09-25 | フオトレジスト用剥離剤 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62238962A JPH0769618B2 (ja) | 1987-09-25 | 1987-09-25 | フオトレジスト用剥離剤 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6481949A true JPS6481949A (en) | 1989-03-28 |
JPH0769618B2 JPH0769618B2 (ja) | 1995-07-31 |
Family
ID=17037884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62238962A Expired - Lifetime JPH0769618B2 (ja) | 1987-09-25 | 1987-09-25 | フオトレジスト用剥離剤 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0769618B2 (ja) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5399203A (en) * | 1992-04-20 | 1995-03-21 | Mitsubishi Kasei Corporation | Method for cleaning oil-deposited material |
US5507978A (en) * | 1995-05-08 | 1996-04-16 | Ocg Microelectronic Materials, Inc. | Novolak containing photoresist stripper composition |
US5545353A (en) * | 1995-05-08 | 1996-08-13 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
US5597678A (en) * | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
US5648324A (en) * | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US6372050B2 (en) | 1997-05-05 | 2002-04-16 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6454868B1 (en) * | 2000-04-17 | 2002-09-24 | Electrochemicals Inc. | Permanganate desmear process for printed wiring boards |
US6458517B2 (en) | 1999-03-31 | 2002-10-01 | Sharp Kabushiki Kaisha | Photoresist stripping composition and process for stripping photoresist |
WO2003003124A1 (fr) * | 2001-06-29 | 2003-01-09 | Mitsubishi Gas Chemical Company, Inc. | Composition de decapage de photoresine |
US6638694B2 (en) | 1999-02-25 | 2003-10-28 | Mitsubishi Gas Chemical Company, Inc | Resist stripping agent and process of producing semiconductor devices using the same |
JP2006195437A (ja) * | 2004-12-13 | 2006-07-27 | Sekisui Chem Co Ltd | レジスト除去方法及びレジスト除去装置 |
US7135445B2 (en) | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
JP2006324358A (ja) * | 2005-05-17 | 2006-11-30 | Sekisui Chem Co Ltd | レジスト除去方法及びレジスト除去装置 |
WO2006132008A1 (ja) * | 2005-06-07 | 2006-12-14 | Toagosei Co., Ltd. | 有機被膜剥離剤、該剥離剤を用いた有機被膜の除去方法および除去装置 |
WO2008152907A1 (ja) * | 2007-06-12 | 2008-12-18 | Toagosei Co., Ltd. | 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 |
WO2010058778A1 (ja) | 2008-11-19 | 2010-05-27 | 東亞合成株式会社 | パターニングされた導電性高分子膜を有する基板の製造方法及びパターニングされた導電性高分子膜を有する基板 |
JP2023018721A (ja) * | 2021-07-28 | 2023-02-09 | ナトコ株式会社 | 塗膜剥離剤 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7384900B2 (en) * | 2003-08-27 | 2008-06-10 | Lg Display Co., Ltd. | Composition and method for removing copper-compatible resist |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5133442A (ja) * | 1974-09-13 | 1976-03-22 | Yamaha Motor Co Ltd | Jidonirinshanonenryotankusochi |
JPS57165834A (en) * | 1981-04-06 | 1982-10-13 | Hitachi Chem Co Ltd | Peeling solution for cured film of photopolymerizing composition |
JPS6026945A (ja) * | 1983-07-25 | 1985-02-09 | ジエイ・テイ・ベ−カ−・ケミカル・カンパニ− | ストリツピング組成物及びレジストをストリツピングする方法 |
JPS6066424A (ja) * | 1983-09-22 | 1985-04-16 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US4617251A (en) * | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
JPS6249355A (ja) * | 1985-08-10 | 1987-03-04 | Nagase Sangyo Kk | 剥離剤組成物 |
-
1987
- 1987-09-25 JP JP62238962A patent/JPH0769618B2/ja not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5133442A (ja) * | 1974-09-13 | 1976-03-22 | Yamaha Motor Co Ltd | Jidonirinshanonenryotankusochi |
JPS57165834A (en) * | 1981-04-06 | 1982-10-13 | Hitachi Chem Co Ltd | Peeling solution for cured film of photopolymerizing composition |
JPS6026945A (ja) * | 1983-07-25 | 1985-02-09 | ジエイ・テイ・ベ−カ−・ケミカル・カンパニ− | ストリツピング組成物及びレジストをストリツピングする方法 |
JPS6066424A (ja) * | 1983-09-22 | 1985-04-16 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US4617251A (en) * | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
JPS6249355A (ja) * | 1985-08-10 | 1987-03-04 | Nagase Sangyo Kk | 剥離剤組成物 |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5399203A (en) * | 1992-04-20 | 1995-03-21 | Mitsubishi Kasei Corporation | Method for cleaning oil-deposited material |
US5597678A (en) * | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5507978A (en) * | 1995-05-08 | 1996-04-16 | Ocg Microelectronic Materials, Inc. | Novolak containing photoresist stripper composition |
US5545353A (en) * | 1995-05-08 | 1996-08-13 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
US5648324A (en) * | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6020292A (en) * | 1996-09-06 | 2000-02-01 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US6191086B1 (en) | 1996-09-06 | 2001-02-20 | Arch Specialty Chemicals, Inc. | Cleaning composition and method for removing residues |
US6372050B2 (en) | 1997-05-05 | 2002-04-16 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6638694B2 (en) | 1999-02-25 | 2003-10-28 | Mitsubishi Gas Chemical Company, Inc | Resist stripping agent and process of producing semiconductor devices using the same |
US6458517B2 (en) | 1999-03-31 | 2002-10-01 | Sharp Kabushiki Kaisha | Photoresist stripping composition and process for stripping photoresist |
US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US7001874B2 (en) | 1999-11-15 | 2006-02-21 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US7402552B2 (en) | 1999-11-15 | 2008-07-22 | Fujifilm Electronic Materials U.S.A., Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6454868B1 (en) * | 2000-04-17 | 2002-09-24 | Electrochemicals Inc. | Permanganate desmear process for printed wiring boards |
WO2003003124A1 (fr) * | 2001-06-29 | 2003-01-09 | Mitsubishi Gas Chemical Company, Inc. | Composition de decapage de photoresine |
JP2003015320A (ja) * | 2001-06-29 | 2003-01-17 | Mitsubishi Gas Chem Co Inc | レジスト剥離剤組成物 |
US7135445B2 (en) | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
JP2006195437A (ja) * | 2004-12-13 | 2006-07-27 | Sekisui Chem Co Ltd | レジスト除去方法及びレジスト除去装置 |
JP2006324358A (ja) * | 2005-05-17 | 2006-11-30 | Sekisui Chem Co Ltd | レジスト除去方法及びレジスト除去装置 |
WO2006132008A1 (ja) * | 2005-06-07 | 2006-12-14 | Toagosei Co., Ltd. | 有機被膜剥離剤、該剥離剤を用いた有機被膜の除去方法および除去装置 |
WO2008152907A1 (ja) * | 2007-06-12 | 2008-12-18 | Toagosei Co., Ltd. | 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 |
JPWO2008152907A1 (ja) * | 2007-06-12 | 2010-08-26 | 東亞合成株式会社 | 導電性高分子上のレジスト膜の剥離剤、レジスト膜の剥離方法、および、パターニングした導電性高分子を有する基板 |
WO2010058778A1 (ja) | 2008-11-19 | 2010-05-27 | 東亞合成株式会社 | パターニングされた導電性高分子膜を有する基板の製造方法及びパターニングされた導電性高分子膜を有する基板 |
JP2023018721A (ja) * | 2021-07-28 | 2023-02-09 | ナトコ株式会社 | 塗膜剥離剤 |
Also Published As
Publication number | Publication date |
---|---|
JPH0769618B2 (ja) | 1995-07-31 |
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