JPS6481219A - Diffusing method - Google Patents

Diffusing method

Info

Publication number
JPS6481219A
JPS6481219A JP23715487A JP23715487A JPS6481219A JP S6481219 A JPS6481219 A JP S6481219A JP 23715487 A JP23715487 A JP 23715487A JP 23715487 A JP23715487 A JP 23715487A JP S6481219 A JPS6481219 A JP S6481219A
Authority
JP
Japan
Prior art keywords
wafer
supplied
reaction chamber
gas
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23715487A
Other languages
Japanese (ja)
Inventor
Yasutoshi Kashiwada
Hidetaka Karita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP23715487A priority Critical patent/JPS6481219A/en
Publication of JPS6481219A publication Critical patent/JPS6481219A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make an impurity concentration constant, by diffusing metal on the surface of a material to be processed which is housed in a reaction chamber, while supplying an organic metal gas and a gas for controlling steam pressure. CONSTITUTION:A semiconductor laser element 1 has a multilayer growth film 3 on a substrate 2 comprising n-type GaAs and of a structure having an anode electrode 4 on the upper surface thereof and a cathode electrode 5 on the lower surface. The element is manufactured by vertically and horizontally dividing a plurality of the semiconductor laser element components formed vertically and horizontally and regularly on a thin and large wafer 13. When Zn is diffused partially on the wafer, the wafer 13 is set on a susceptor 16 in a ball jar 14 and a reaction chamber 15 is controlled at a desired vacuum degree. After a hydrogen gas is supplied into the reaction chamber 15 through a line 20 and purged, dimethylzinc 25 is supplied and then arsine 28 is supplied. As a result, the whole main surface of the wafer 13 is uniformly heated and uniform Zn diffusion can be performed.
JP23715487A 1987-09-24 1987-09-24 Diffusing method Pending JPS6481219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23715487A JPS6481219A (en) 1987-09-24 1987-09-24 Diffusing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23715487A JPS6481219A (en) 1987-09-24 1987-09-24 Diffusing method

Publications (1)

Publication Number Publication Date
JPS6481219A true JPS6481219A (en) 1989-03-27

Family

ID=17011203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23715487A Pending JPS6481219A (en) 1987-09-24 1987-09-24 Diffusing method

Country Status (1)

Country Link
JP (1) JPS6481219A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6384646B1 (en) * 2017-05-12 2018-09-05 三菱電機株式会社 Manufacturing method of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6384646B1 (en) * 2017-05-12 2018-09-05 三菱電機株式会社 Manufacturing method of semiconductor device
WO2018207355A1 (en) * 2017-05-12 2018-11-15 三菱電機株式会社 Semiconductor device production method
US10910222B2 (en) 2017-05-12 2021-02-02 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

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