JPS6479370A - Method and device for film formation by sputtering - Google Patents
Method and device for film formation by sputteringInfo
- Publication number
- JPS6479370A JPS6479370A JP23780787A JP23780787A JPS6479370A JP S6479370 A JPS6479370 A JP S6479370A JP 23780787 A JP23780787 A JP 23780787A JP 23780787 A JP23780787 A JP 23780787A JP S6479370 A JPS6479370 A JP S6479370A
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- film
- gas
- reactive
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a film which is not changed in compsn. in the thickness direction of the film by decreasing the partial pressure ratio between a reactive gas and an inert gas or the flow rate ratio between the reaction gas and the inert gas as the film is increasingly deposited on a substrate. CONSTITUTION:An O2 flow rate regulating valve 20 and an Ar flow rate valve 21 are controlled by a gas flow rate regulator 22 in film formation by reactive sputtering. For example, the flow rate of O2 is so controlled as to be approximately exponential-functionally decreased from the start of the film formation. The partial pressure of the reactive gas/the partial pressure of the inert gas (partial pressure ratio) or the flow rate of the reactive gas/the flow rate of the inert gas (flow rate ratio) is thereby decreased and the quantity of the reactive gas is decreased as the film is deposited. As a result, the change in the concn. of the reactive gaseous component to be generated by a change in the sputtering rate is offset and the film which is not changed in the compsn. ratio in the thickness direction of the film is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62237807A JPH0776420B2 (en) | 1987-09-22 | 1987-09-22 | Sputtering film forming method and film forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62237807A JPH0776420B2 (en) | 1987-09-22 | 1987-09-22 | Sputtering film forming method and film forming apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6479370A true JPS6479370A (en) | 1989-03-24 |
JPH0776420B2 JPH0776420B2 (en) | 1995-08-16 |
Family
ID=17020700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62237807A Expired - Fee Related JPH0776420B2 (en) | 1987-09-22 | 1987-09-22 | Sputtering film forming method and film forming apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0776420B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6821577B2 (en) | 1998-03-20 | 2004-11-23 | Applied Materials, Inc. | Staggered in-situ deposition and etching of a dielectric layer for HDP CVD |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61176010A (en) * | 1985-01-30 | 1986-08-07 | 株式会社日立製作所 | Manufacture of transparent conductive film |
-
1987
- 1987-09-22 JP JP62237807A patent/JPH0776420B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61176010A (en) * | 1985-01-30 | 1986-08-07 | 株式会社日立製作所 | Manufacture of transparent conductive film |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6821577B2 (en) | 1998-03-20 | 2004-11-23 | Applied Materials, Inc. | Staggered in-situ deposition and etching of a dielectric layer for HDP CVD |
US7132134B2 (en) | 1998-03-20 | 2006-11-07 | Applied Materials, Inc. | Staggered in-situ deposition and etching of a dielectric layer for HDP CVD |
US7455893B2 (en) | 1998-03-20 | 2008-11-25 | Applied Materials, Inc. | Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD |
Also Published As
Publication number | Publication date |
---|---|
JPH0776420B2 (en) | 1995-08-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |