JPS6479370A - Method and device for film formation by sputtering - Google Patents

Method and device for film formation by sputtering

Info

Publication number
JPS6479370A
JPS6479370A JP23780787A JP23780787A JPS6479370A JP S6479370 A JPS6479370 A JP S6479370A JP 23780787 A JP23780787 A JP 23780787A JP 23780787 A JP23780787 A JP 23780787A JP S6479370 A JPS6479370 A JP S6479370A
Authority
JP
Japan
Prior art keywords
flow rate
film
gas
reactive
ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23780787A
Other languages
Japanese (ja)
Other versions
JPH0776420B2 (en
Inventor
Isamu Inoue
Kazumi Yoshioka
Takeo Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62237807A priority Critical patent/JPH0776420B2/en
Publication of JPS6479370A publication Critical patent/JPS6479370A/en
Publication of JPH0776420B2 publication Critical patent/JPH0776420B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To form a film which is not changed in compsn. in the thickness direction of the film by decreasing the partial pressure ratio between a reactive gas and an inert gas or the flow rate ratio between the reaction gas and the inert gas as the film is increasingly deposited on a substrate. CONSTITUTION:An O2 flow rate regulating valve 20 and an Ar flow rate valve 21 are controlled by a gas flow rate regulator 22 in film formation by reactive sputtering. For example, the flow rate of O2 is so controlled as to be approximately exponential-functionally decreased from the start of the film formation. The partial pressure of the reactive gas/the partial pressure of the inert gas (partial pressure ratio) or the flow rate of the reactive gas/the flow rate of the inert gas (flow rate ratio) is thereby decreased and the quantity of the reactive gas is decreased as the film is deposited. As a result, the change in the concn. of the reactive gaseous component to be generated by a change in the sputtering rate is offset and the film which is not changed in the compsn. ratio in the thickness direction of the film is formed.
JP62237807A 1987-09-22 1987-09-22 Sputtering film forming method and film forming apparatus Expired - Fee Related JPH0776420B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62237807A JPH0776420B2 (en) 1987-09-22 1987-09-22 Sputtering film forming method and film forming apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62237807A JPH0776420B2 (en) 1987-09-22 1987-09-22 Sputtering film forming method and film forming apparatus

Publications (2)

Publication Number Publication Date
JPS6479370A true JPS6479370A (en) 1989-03-24
JPH0776420B2 JPH0776420B2 (en) 1995-08-16

Family

ID=17020700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62237807A Expired - Fee Related JPH0776420B2 (en) 1987-09-22 1987-09-22 Sputtering film forming method and film forming apparatus

Country Status (1)

Country Link
JP (1) JPH0776420B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821577B2 (en) 1998-03-20 2004-11-23 Applied Materials, Inc. Staggered in-situ deposition and etching of a dielectric layer for HDP CVD

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176010A (en) * 1985-01-30 1986-08-07 株式会社日立製作所 Manufacture of transparent conductive film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176010A (en) * 1985-01-30 1986-08-07 株式会社日立製作所 Manufacture of transparent conductive film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821577B2 (en) 1998-03-20 2004-11-23 Applied Materials, Inc. Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
US7132134B2 (en) 1998-03-20 2006-11-07 Applied Materials, Inc. Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
US7455893B2 (en) 1998-03-20 2008-11-25 Applied Materials, Inc. Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD

Also Published As

Publication number Publication date
JPH0776420B2 (en) 1995-08-16

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees