JPS6476772A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
JPS6476772A
JPS6476772A JP62235323A JP23532387A JPS6476772A JP S6476772 A JPS6476772 A JP S6476772A JP 62235323 A JP62235323 A JP 62235323A JP 23532387 A JP23532387 A JP 23532387A JP S6476772 A JPS6476772 A JP S6476772A
Authority
JP
Japan
Prior art keywords
corner
unit cell
source region
semiconductor region
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62235323A
Other languages
Japanese (ja)
Inventor
Hiroshi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62235323A priority Critical patent/JPS6476772A/en
Publication of JPS6476772A publication Critical patent/JPS6476772A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Abstract

PURPOSE:To improve breakdown strength of device constitution, by arranging a central space in a semiconductor region, and forming a source region, only at a part except corner parts. CONSTITUTION:Each N<+> type source region 3, 3 in a P-type semiconductor region 2 is formed only on the surface part except each corner part, in such a manner as to arrange a central space, on the sides of which basic MOS cell units face each other in the longitudinal and transversal directions. Each N<+> type source region 3, 3 in the P-type semiconductor region 2 of the basic MOS unit cell is not formed at the corner parts, but formed only on the sides being contact with the basic MOS unit cell adjacent in the longitudinal and transversal directions. As a result, the base resistance Ra of a parasitic transistor at the corner part of the MOS unit Cell does not become larger than the other parts. Therefore, it can be prevented that the parasitic transistor is turned into conductive state from each corner side by a comparatively small current, and the breakdown strength of device can be improved.
JP62235323A 1987-09-17 1987-09-17 Field-effect semiconductor device Pending JPS6476772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62235323A JPS6476772A (en) 1987-09-17 1987-09-17 Field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235323A JPS6476772A (en) 1987-09-17 1987-09-17 Field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS6476772A true JPS6476772A (en) 1989-03-22

Family

ID=16984404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235323A Pending JPS6476772A (en) 1987-09-17 1987-09-17 Field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS6476772A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6105958A (en) * 1996-03-12 2000-08-22 Oce-Nederland B.V. Sheet collecting device for collecting sheets of different dimensions on supports

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62189759A (en) * 1985-12-11 1987-08-19 ゼネラル・エレクトリツク・カンパニイ Current limiting type insulated gate semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62189759A (en) * 1985-12-11 1987-08-19 ゼネラル・エレクトリツク・カンパニイ Current limiting type insulated gate semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6105958A (en) * 1996-03-12 2000-08-22 Oce-Nederland B.V. Sheet collecting device for collecting sheets of different dimensions on supports

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