JPS6473666A - Charge input circuit - Google Patents
Charge input circuitInfo
- Publication number
- JPS6473666A JPS6473666A JP62230253A JP23025387A JPS6473666A JP S6473666 A JPS6473666 A JP S6473666A JP 62230253 A JP62230253 A JP 62230253A JP 23025387 A JP23025387 A JP 23025387A JP S6473666 A JPS6473666 A JP S6473666A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- well
- gate
- pass filter
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To improve the S/N ratio by a method wherein a low-pass filter is installed in a negative feedback route from a source to a gate of a field-effect transistor. CONSTITUTION:A photoelectric current generated by an infrared beam photodetected by using a PV device 1 is fed to an n<+> diffusion layer 21 from an n<+> diffusion layer 13; it is accumulated as a signal charge in a well of a potential in a region of a P-well 17 situated directly under an accumulation gate 26 through the region of the P-well 17 situated directly under an input gate electrode 25. This signal charge is then transferred to a CCD. On the other hand, a source potential in the n<+> diffusion layer 21 is impressed on a gate electrode 23 and is taken out from an n<+> diffusion layer 19 after inversion and amplification; it is endowed with a low-pass filter characteristic by a capacitor 10 and is input to the n<+> diffusion layer 21 after a negative feedback. By this setup, it is possible to reduce the injection efficiency of a high-frequency component of a white noise as a dominant noise of the PV device 1; as a result, it is possible to improve the S/N ratio.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62230253A JP2590135B2 (en) | 1987-09-14 | 1987-09-14 | Charge input circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62230253A JP2590135B2 (en) | 1987-09-14 | 1987-09-14 | Charge input circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6473666A true JPS6473666A (en) | 1989-03-17 |
JP2590135B2 JP2590135B2 (en) | 1997-03-12 |
Family
ID=16904912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62230253A Expired - Lifetime JP2590135B2 (en) | 1987-09-14 | 1987-09-14 | Charge input circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2590135B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100426529B1 (en) * | 2002-03-12 | 2004-04-14 | 주식회사 케이이씨 | Signal Processing Circuit for Detecting heat image |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58139298A (en) * | 1982-02-13 | 1983-08-18 | オプテックス株式会社 | Pulse modulation type infrared ray burglar alarm |
JPS5921059A (en) * | 1982-07-28 | 1984-02-02 | Hitachi Ltd | Charge transfer circuit |
-
1987
- 1987-09-14 JP JP62230253A patent/JP2590135B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58139298A (en) * | 1982-02-13 | 1983-08-18 | オプテックス株式会社 | Pulse modulation type infrared ray burglar alarm |
JPS5921059A (en) * | 1982-07-28 | 1984-02-02 | Hitachi Ltd | Charge transfer circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100426529B1 (en) * | 2002-03-12 | 2004-04-14 | 주식회사 케이이씨 | Signal Processing Circuit for Detecting heat image |
Also Published As
Publication number | Publication date |
---|---|
JP2590135B2 (en) | 1997-03-12 |
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