JPS6473666A - Charge input circuit - Google Patents

Charge input circuit

Info

Publication number
JPS6473666A
JPS6473666A JP62230253A JP23025387A JPS6473666A JP S6473666 A JPS6473666 A JP S6473666A JP 62230253 A JP62230253 A JP 62230253A JP 23025387 A JP23025387 A JP 23025387A JP S6473666 A JPS6473666 A JP S6473666A
Authority
JP
Japan
Prior art keywords
diffusion layer
well
gate
pass filter
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62230253A
Other languages
Japanese (ja)
Other versions
JP2590135B2 (en
Inventor
Yoshihiro Miyamoto
Yuichiro Ito
Kazuya Kubo
Nobuyuki Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62230253A priority Critical patent/JP2590135B2/en
Publication of JPS6473666A publication Critical patent/JPS6473666A/en
Application granted granted Critical
Publication of JP2590135B2 publication Critical patent/JP2590135B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve the S/N ratio by a method wherein a low-pass filter is installed in a negative feedback route from a source to a gate of a field-effect transistor. CONSTITUTION:A photoelectric current generated by an infrared beam photodetected by using a PV device 1 is fed to an n<+> diffusion layer 21 from an n<+> diffusion layer 13; it is accumulated as a signal charge in a well of a potential in a region of a P-well 17 situated directly under an accumulation gate 26 through the region of the P-well 17 situated directly under an input gate electrode 25. This signal charge is then transferred to a CCD. On the other hand, a source potential in the n<+> diffusion layer 21 is impressed on a gate electrode 23 and is taken out from an n<+> diffusion layer 19 after inversion and amplification; it is endowed with a low-pass filter characteristic by a capacitor 10 and is input to the n<+> diffusion layer 21 after a negative feedback. By this setup, it is possible to reduce the injection efficiency of a high-frequency component of a white noise as a dominant noise of the PV device 1; as a result, it is possible to improve the S/N ratio.
JP62230253A 1987-09-14 1987-09-14 Charge input circuit Expired - Lifetime JP2590135B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62230253A JP2590135B2 (en) 1987-09-14 1987-09-14 Charge input circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62230253A JP2590135B2 (en) 1987-09-14 1987-09-14 Charge input circuit

Publications (2)

Publication Number Publication Date
JPS6473666A true JPS6473666A (en) 1989-03-17
JP2590135B2 JP2590135B2 (en) 1997-03-12

Family

ID=16904912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230253A Expired - Lifetime JP2590135B2 (en) 1987-09-14 1987-09-14 Charge input circuit

Country Status (1)

Country Link
JP (1) JP2590135B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100426529B1 (en) * 2002-03-12 2004-04-14 주식회사 케이이씨 Signal Processing Circuit for Detecting heat image

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139298A (en) * 1982-02-13 1983-08-18 オプテックス株式会社 Pulse modulation type infrared ray burglar alarm
JPS5921059A (en) * 1982-07-28 1984-02-02 Hitachi Ltd Charge transfer circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139298A (en) * 1982-02-13 1983-08-18 オプテックス株式会社 Pulse modulation type infrared ray burglar alarm
JPS5921059A (en) * 1982-07-28 1984-02-02 Hitachi Ltd Charge transfer circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100426529B1 (en) * 2002-03-12 2004-04-14 주식회사 케이이씨 Signal Processing Circuit for Detecting heat image

Also Published As

Publication number Publication date
JP2590135B2 (en) 1997-03-12

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