JPS647338B2 - - Google Patents
Info
- Publication number
- JPS647338B2 JPS647338B2 JP55086172A JP8617280A JPS647338B2 JP S647338 B2 JPS647338 B2 JP S647338B2 JP 55086172 A JP55086172 A JP 55086172A JP 8617280 A JP8617280 A JP 8617280A JP S647338 B2 JPS647338 B2 JP S647338B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- oxygen
- heat treatment
- contained
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 238000010438 heat treatment Methods 0.000 claims description 46
- 229910052710 silicon Inorganic materials 0.000 claims description 46
- 239000010703 silicon Substances 0.000 claims description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 45
- 239000001301 oxygen Substances 0.000 claims description 45
- 229910052760 oxygen Inorganic materials 0.000 claims description 45
- 239000012535 impurity Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 14
- 239000002210 silicon-based material Substances 0.000 claims description 9
- 238000012360 testing method Methods 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating And Analyzing Materials By Characteristic Methods (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8617280A JPS5712356A (en) | 1980-06-25 | 1980-06-25 | Method for measuring content of oxygen in silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8617280A JPS5712356A (en) | 1980-06-25 | 1980-06-25 | Method for measuring content of oxygen in silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5712356A JPS5712356A (en) | 1982-01-22 |
| JPS647338B2 true JPS647338B2 (de) | 1989-02-08 |
Family
ID=13879329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8617280A Granted JPS5712356A (en) | 1980-06-25 | 1980-06-25 | Method for measuring content of oxygen in silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5712356A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2964459B1 (fr) * | 2010-09-02 | 2012-09-28 | Commissariat Energie Atomique | Procede de cartographie de la concentration en oxygene |
| FR2974180B1 (fr) | 2011-04-15 | 2013-04-26 | Commissariat Energie Atomique | Procede de determination de la concentration en oxygene interstitiel. |
| FR2989168B1 (fr) * | 2012-04-06 | 2014-03-28 | Commissariat Energie Atomique | Determination de la concentration en oxygene interstitiel dans un echantillon semi-conducteur |
-
1980
- 1980-06-25 JP JP8617280A patent/JPS5712356A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5712356A (en) | 1982-01-22 |
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| JPS647338B2 (de) | ||
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