JPS64724A - Forming method of deposit film - Google Patents

Forming method of deposit film

Info

Publication number
JPS64724A
JPS64724A JP62073610A JP7361087A JPS64724A JP S64724 A JPS64724 A JP S64724A JP 62073610 A JP62073610 A JP 62073610A JP 7361087 A JP7361087 A JP 7361087A JP S64724 A JPS64724 A JP S64724A
Authority
JP
Japan
Prior art keywords
space
film formation
film
exciting
formation space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62073610A
Other languages
Japanese (ja)
Other versions
JPH01724A (en
Inventor
Toshimitsu Kariya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62073610A priority Critical patent/JPS64724A/en
Publication of JPH01724A publication Critical patent/JPH01724A/en
Publication of JPS64724A publication Critical patent/JPS64724A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To equalize various characteristics of a film formed, the quality of the film and film thickness, and to shape the film having a large area by gradually increasing the sectional area of gas transport space between film formation space and gas exciting space toward the film formation space.
CONSTITUTION: The sectional area of gas transport space between film formation space 5 and exciting space 3 is expanded gradually toward the film formation space 5. A raw material gas 1 is excited by microwaves 2 in the exciting space 3, and one part is deposited onto a base body 6 mounted into the film formation space 5 through a hone-shaped nozzle 4 made of a metal, and one part is exhausted 7 by an exhaust means. When the raw material gas 1 is excited by microwaves and brought to the state of plasma, partial microwaves are emitted from a cavity resonator 8, but they are damped slowly by the hone-shaped nozzle 4 made of the metal, and do not intrude into the cavity resonator again, thus allowing plasma discharge even at low voltage. Since length l1 up to the film formation space from the exciting space is made sufficiently long, plasma does not reach onto the base body.
COPYRIGHT: (C)1989,JPO&Japio
JP62073610A 1987-03-20 1987-03-27 Forming method of deposit film Pending JPS64724A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62073610A JPS64724A (en) 1987-03-20 1987-03-27 Forming method of deposit film

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-66516 1987-03-20
JP6651687 1987-03-20
JP62073610A JPS64724A (en) 1987-03-20 1987-03-27 Forming method of deposit film

Publications (2)

Publication Number Publication Date
JPH01724A JPH01724A (en) 1989-01-05
JPS64724A true JPS64724A (en) 1989-01-05

Family

ID=26407701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62073610A Pending JPS64724A (en) 1987-03-20 1987-03-27 Forming method of deposit film

Country Status (1)

Country Link
JP (1) JPS64724A (en)

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