JPS6468472A - Sputtering target - Google Patents

Sputtering target

Info

Publication number
JPS6468472A
JPS6468472A JP22570987A JP22570987A JPS6468472A JP S6468472 A JPS6468472 A JP S6468472A JP 22570987 A JP22570987 A JP 22570987A JP 22570987 A JP22570987 A JP 22570987A JP S6468472 A JPS6468472 A JP S6468472A
Authority
JP
Japan
Prior art keywords
rare
elements
target
sputtering target
earth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22570987A
Other languages
Japanese (ja)
Inventor
Shin Funada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP22570987A priority Critical patent/JPS6468472A/en
Publication of JPS6468472A publication Critical patent/JPS6468472A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a vapor-deposited film on a substrate at superior deposition velocity without causing target cracking, by forming a target by using plural alloy ingots with a specific composition at the time of manufacturing a sputtering target consisting of a rare-earth metal - transition metal alloy of extremely brittle material. CONSTITUTION:At the time of manufacturing a sputtering target by using a rare earth metal - transition metal alloy in which one or more elements among Tb, Dy, and Gd as heavy rare-earth metals or one or more elements among Ce, Pr, Nd, and Sm as light rare-earth metals are used as rare-earth elements (RE) and one or more elements among Fe, Co and Ni are used as transition metals (TM) and which has a composition represented by RE1-xTMx [where (x) stands for 0.15-0.35], the sputtering target is formed so that a target 102 is composed of plural alloy ingots and the nearest neibor distance of the alloy ingots 102 on a backing plate 101 plane side is shorter than that on a sputter plane side.
JP22570987A 1987-09-09 1987-09-09 Sputtering target Pending JPS6468472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22570987A JPS6468472A (en) 1987-09-09 1987-09-09 Sputtering target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22570987A JPS6468472A (en) 1987-09-09 1987-09-09 Sputtering target

Publications (1)

Publication Number Publication Date
JPS6468472A true JPS6468472A (en) 1989-03-14

Family

ID=16833574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22570987A Pending JPS6468472A (en) 1987-09-09 1987-09-09 Sputtering target

Country Status (1)

Country Link
JP (1) JPS6468472A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109423615A (en) * 2017-08-30 2019-03-05 光洋应用材料科技股份有限公司 Nickel rhenium alloys target and its preparation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109423615A (en) * 2017-08-30 2019-03-05 光洋应用材料科技股份有限公司 Nickel rhenium alloys target and its preparation method
CN109423615B (en) * 2017-08-30 2021-02-02 光洋应用材料科技股份有限公司 Nickel-rhenium alloy target material and manufacturing method thereof

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