JPS6468463A - Method for vapor deposition by sputtering - Google Patents
Method for vapor deposition by sputteringInfo
- Publication number
- JPS6468463A JPS6468463A JP62223161A JP22316187A JPS6468463A JP S6468463 A JPS6468463 A JP S6468463A JP 62223161 A JP62223161 A JP 62223161A JP 22316187 A JP22316187 A JP 22316187A JP S6468463 A JPS6468463 A JP S6468463A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor deposition
- thin films
- thicknesses
- order
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
PURPOSE:To easily form plural sputtered thin films on a substrate for vapor deposition at exact thicknesses by using a target on which materials for thin films are deposited by physical evaporation to required thicknesses in order reverse from order of the sputtered thin films at the time of forming the plural layers of the thin films on the substrate of a method for vapor deposition by sputtering. CONSTITUTION:The target constituted by depositing BaO 2, Y2O3 3 and Cu 4 in this order, which is reverse from order of the materials deposited by evaporation on the substrate 6 for vapor deposition consisting of ceramics such as glass, alumina or berylia to the prescribed thicknesses on the surface of the substrate 1 made of a Cu-base alloy by the physical method such as vapor deposition by sputtering or ion plating is used as the target to be used for forming the thin films of Cu 7, Y2O3 8, and BaO 9 at the respective specific thicknesses on the surface of the above-mentioned substrate 6. The thin vapor deposited films of the plural metals or compds. are formed at the exact thicknesses on the substrate 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62223161A JPS6468463A (en) | 1987-09-08 | 1987-09-08 | Method for vapor deposition by sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62223161A JPS6468463A (en) | 1987-09-08 | 1987-09-08 | Method for vapor deposition by sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6468463A true JPS6468463A (en) | 1989-03-14 |
Family
ID=16793750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62223161A Pending JPS6468463A (en) | 1987-09-08 | 1987-09-08 | Method for vapor deposition by sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6468463A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5118661A (en) * | 1989-11-21 | 1992-06-02 | Nec Corporation | Sputtering target for use in fabricating integrated circuit device |
-
1987
- 1987-09-08 JP JP62223161A patent/JPS6468463A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5118661A (en) * | 1989-11-21 | 1992-06-02 | Nec Corporation | Sputtering target for use in fabricating integrated circuit device |
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