JPS646778A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS646778A JPS646778A JP62136877A JP13687787A JPS646778A JP S646778 A JPS646778 A JP S646778A JP 62136877 A JP62136877 A JP 62136877A JP 13687787 A JP13687787 A JP 13687787A JP S646778 A JPS646778 A JP S646778A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- oscillator
- high level
- oscillation frequency
- terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Frequencies, Analyzing Spectra (AREA)
Abstract
PURPOSE:To check the frequency of a CR oscillator, which is self-oscillating in an IC, readily, by inputting a sampling frequency into a clock input terminal in a testing state. CONSTITUTION:Terminals P1 and P2 are used to output the judge result of the frequency of a built-in CR oscillator 9. When the oscillator 9 is oscillating at a desired frequency, a sampling signal, whose frequency is higher than the oscillation frequency of the oscillator 9, is applied to a PG terminal from an external LSI tester. When the oscillation frequency of the oscillator 9 is lower than the desired frequency at this time, the width of a pulse during the high level period of the oscillation frequency becomes long. The number of the pulses at the high level of the sampling frequency is increased. Latch outputs at a high potential are taken out of the terminals P1 and P2. Meanwhile, when the oscillation frequency of the oscillator 9 is higher than the desired frequency, the pulse width during the high level period of the oscillation frequency becomes short. Then, the number of the pulses of the sampling frequency at the high level is decreased. The latch outputs at a low potential are taken out of the terminals P1 and P2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62136877A JPS646778A (en) | 1987-05-29 | 1987-05-29 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62136877A JPS646778A (en) | 1987-05-29 | 1987-05-29 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS646778A true JPS646778A (en) | 1989-01-11 |
Family
ID=15185621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62136877A Pending JPS646778A (en) | 1987-05-29 | 1987-05-29 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS646778A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08203298A (en) * | 1994-08-26 | 1996-08-09 | Sgs Thomson Microelectron Ltd | Integrated circuit device and its test method |
-
1987
- 1987-05-29 JP JP62136877A patent/JPS646778A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08203298A (en) * | 1994-08-26 | 1996-08-09 | Sgs Thomson Microelectron Ltd | Integrated circuit device and its test method |
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