JPS6465838A - Manufacture of mask for x-ray exposure stepper - Google Patents

Manufacture of mask for x-ray exposure stepper

Info

Publication number
JPS6465838A
JPS6465838A JP22123087A JP22123087A JPS6465838A JP S6465838 A JPS6465838 A JP S6465838A JP 22123087 A JP22123087 A JP 22123087A JP 22123087 A JP22123087 A JP 22123087A JP S6465838 A JPS6465838 A JP S6465838A
Authority
JP
Japan
Prior art keywords
film
resist
peripheral part
mask
ray transmitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22123087A
Other languages
Japanese (ja)
Inventor
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22123087A priority Critical patent/JPS6465838A/en
Publication of JPS6465838A publication Critical patent/JPS6465838A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the generation of deformation and so on by a method wherein desired metallic patterns and annular metallic patterns are respectively formed on the central region of an X-ray transmitting film and the peripheral part of the X-ray transmitting film by a resist method and a plating is applied to the peripheral part using a resist film formed on the central region as a mask. CONSTITUTION:An Si wafer with such an X-ray transmitting film as a boron nitride film formed thereon is adhered on a ring 11 and thereafter, the Si wafer is etched to leave an annular wafer 12 and the X-ray transmitting film (boron nitride film) 13. A plated base film 3, a polyimide film 31, an Si dioxide film 32 and a resist film 33 are formed in order thereon. A resist pattern is formed by an electron beam lithography and so on to pattern the films 32 and 31 and a gold plating is applied on the film 13 to form desired metallic patterns 41 on the central part of the film 3 and to form annular metallic patterns 42 on the peripheral part of the film 3. The residual films 31-33 and the film 3 at apertures are removed. A resist film 5 to cover the central part other than the peripheral part is formed, a metallic film is plated on the peripheral part using this resist film 5 as a mask and the film 5 is removed.
JP22123087A 1987-09-05 1987-09-05 Manufacture of mask for x-ray exposure stepper Pending JPS6465838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22123087A JPS6465838A (en) 1987-09-05 1987-09-05 Manufacture of mask for x-ray exposure stepper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22123087A JPS6465838A (en) 1987-09-05 1987-09-05 Manufacture of mask for x-ray exposure stepper

Publications (1)

Publication Number Publication Date
JPS6465838A true JPS6465838A (en) 1989-03-13

Family

ID=16763507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22123087A Pending JPS6465838A (en) 1987-09-05 1987-09-05 Manufacture of mask for x-ray exposure stepper

Country Status (1)

Country Link
JP (1) JPS6465838A (en)

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