JPS6465442A - Hydrogenated gas detecting element - Google Patents

Hydrogenated gas detecting element

Info

Publication number
JPS6465442A
JPS6465442A JP22205587A JP22205587A JPS6465442A JP S6465442 A JPS6465442 A JP S6465442A JP 22205587 A JP22205587 A JP 22205587A JP 22205587 A JP22205587 A JP 22205587A JP S6465442 A JPS6465442 A JP S6465442A
Authority
JP
Japan
Prior art keywords
semiconductor
pair
electrode terminal
hydrogenated gas
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22205587A
Other languages
Japanese (ja)
Other versions
JPH0658335B2 (en
Inventor
Kazumi Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Chemical Industrial Co Ltd
Original Assignee
Nippon Chemical Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Chemical Industrial Co Ltd filed Critical Nippon Chemical Industrial Co Ltd
Priority to JP22205587A priority Critical patent/JPH0658335B2/en
Publication of JPS6465442A publication Critical patent/JPS6465442A/en
Publication of JPH0658335B2 publication Critical patent/JPH0658335B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE:To improve sensitivity and accuracy by constituting an element of a semi-insulating high-purity semiconductor provided with a chemical reaction carrier which can react with a hydrogenated gas and a pair of electrode terminal metals which make ohmic electrical contact with this semiconductor. CONSTITUTION:The chemical reaction carrier (thin HgO film) 2 having 0.1mum film thickness is joined by a sputtering method to the semi-insulating high-purity semiconductor (substrade) 1. A pair of the Au electrode terminal 3 and in electrode terminal 4 which make ohmic electric contact with the semiconductor 1 having said carrier 2 are provided to said semiconductor. Element current is detected with high sensitivity and high accuracy by a pair of the terminal 3, 4.
JP22205587A 1987-09-07 1987-09-07 Hydrogen gas detector Expired - Fee Related JPH0658335B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22205587A JPH0658335B2 (en) 1987-09-07 1987-09-07 Hydrogen gas detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22205587A JPH0658335B2 (en) 1987-09-07 1987-09-07 Hydrogen gas detector

Publications (2)

Publication Number Publication Date
JPS6465442A true JPS6465442A (en) 1989-03-10
JPH0658335B2 JPH0658335B2 (en) 1994-08-03

Family

ID=16776392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22205587A Expired - Fee Related JPH0658335B2 (en) 1987-09-07 1987-09-07 Hydrogen gas detector

Country Status (1)

Country Link
JP (1) JPH0658335B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017161302A (en) * 2016-03-08 2017-09-14 富士通株式会社 Gas sensor, gas sensor array, and gas sensor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017161302A (en) * 2016-03-08 2017-09-14 富士通株式会社 Gas sensor, gas sensor array, and gas sensor device

Also Published As

Publication number Publication date
JPH0658335B2 (en) 1994-08-03

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees