JPS6464811A - Cutting of sapphire wafer - Google Patents

Cutting of sapphire wafer

Info

Publication number
JPS6464811A
JPS6464811A JP22339887A JP22339887A JPS6464811A JP S6464811 A JPS6464811 A JP S6464811A JP 22339887 A JP22339887 A JP 22339887A JP 22339887 A JP22339887 A JP 22339887A JP S6464811 A JPS6464811 A JP S6464811A
Authority
JP
Japan
Prior art keywords
electrodes
sapphire wafer
cutting
sapphire
crosswise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22339887A
Other languages
Japanese (ja)
Inventor
Masamichi Ipponmatsu
Takeshi Matsumoto
Takashi Matsuzaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Osaka Gas Co Ltd
Original Assignee
Toshiba Corp
Osaka Gas Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Osaka Gas Co Ltd filed Critical Toshiba Corp
Priority to JP22339887A priority Critical patent/JPS6464811A/en
Publication of JPS6464811A publication Critical patent/JPS6464811A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to carry out easily cutting of a sapphire wafer without spoiling the surface physical properties of a gas snsor element, by cutting the sapphire wafer of a specific thickness on the surface of which many gas sensor elements are formed by means of scribing. CONSTITUTION:A pair of electrodes consisting of electrodes 6 and 8 is e.g. thin membranes comprised of platinum, which is formed on each divided area of a sapphire wafter 2 by means of sputtering process. Dimensions of the electrodes 6 and 8 are 1.6X0.6mm and these electrodes are formed face to face each other in the distance of 0.4mm. The membrane thickness is e.g. 0.3mm. As the materials constituting the electrodes, not only platinum, but also those having high electric conductivity such as gold, silver, aluminum can be used. On the sapphire wafer 2, one of the surface on which many gas sensor elements 4 are formed, scratched cuts 12 are drawn in parallel to each other lengthwise and crosswise by means of a well known scriber, a diamond needle. Moreover, crosswise scratched cuts 12 are drawn perpendicular thereto.
JP22339887A 1987-09-07 1987-09-07 Cutting of sapphire wafer Pending JPS6464811A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22339887A JPS6464811A (en) 1987-09-07 1987-09-07 Cutting of sapphire wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22339887A JPS6464811A (en) 1987-09-07 1987-09-07 Cutting of sapphire wafer

Publications (1)

Publication Number Publication Date
JPS6464811A true JPS6464811A (en) 1989-03-10

Family

ID=16797524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22339887A Pending JPS6464811A (en) 1987-09-07 1987-09-07 Cutting of sapphire wafer

Country Status (1)

Country Link
JP (1) JPS6464811A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183136B2 (en) 2002-06-24 2007-02-27 Toyoda Gosei Co., Ltd. Semiconductor element and method for producing the same
CN102059747A (en) * 2010-08-25 2011-05-18 重庆川仪自动化股份有限公司 Method for forming sapphire square hole

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183136B2 (en) 2002-06-24 2007-02-27 Toyoda Gosei Co., Ltd. Semiconductor element and method for producing the same
CN102059747A (en) * 2010-08-25 2011-05-18 重庆川仪自动化股份有限公司 Method for forming sapphire square hole

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