JPS6464811A - Cutting of sapphire wafer - Google Patents
Cutting of sapphire waferInfo
- Publication number
- JPS6464811A JPS6464811A JP22339887A JP22339887A JPS6464811A JP S6464811 A JPS6464811 A JP S6464811A JP 22339887 A JP22339887 A JP 22339887A JP 22339887 A JP22339887 A JP 22339887A JP S6464811 A JPS6464811 A JP S6464811A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- sapphire wafer
- cutting
- sapphire
- crosswise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make it possible to carry out easily cutting of a sapphire wafer without spoiling the surface physical properties of a gas snsor element, by cutting the sapphire wafer of a specific thickness on the surface of which many gas sensor elements are formed by means of scribing. CONSTITUTION:A pair of electrodes consisting of electrodes 6 and 8 is e.g. thin membranes comprised of platinum, which is formed on each divided area of a sapphire wafter 2 by means of sputtering process. Dimensions of the electrodes 6 and 8 are 1.6X0.6mm and these electrodes are formed face to face each other in the distance of 0.4mm. The membrane thickness is e.g. 0.3mm. As the materials constituting the electrodes, not only platinum, but also those having high electric conductivity such as gold, silver, aluminum can be used. On the sapphire wafer 2, one of the surface on which many gas sensor elements 4 are formed, scratched cuts 12 are drawn in parallel to each other lengthwise and crosswise by means of a well known scriber, a diamond needle. Moreover, crosswise scratched cuts 12 are drawn perpendicular thereto.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22339887A JPS6464811A (en) | 1987-09-07 | 1987-09-07 | Cutting of sapphire wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22339887A JPS6464811A (en) | 1987-09-07 | 1987-09-07 | Cutting of sapphire wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464811A true JPS6464811A (en) | 1989-03-10 |
Family
ID=16797524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22339887A Pending JPS6464811A (en) | 1987-09-07 | 1987-09-07 | Cutting of sapphire wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464811A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7183136B2 (en) | 2002-06-24 | 2007-02-27 | Toyoda Gosei Co., Ltd. | Semiconductor element and method for producing the same |
CN102059747A (en) * | 2010-08-25 | 2011-05-18 | 重庆川仪自动化股份有限公司 | Method for forming sapphire square hole |
-
1987
- 1987-09-07 JP JP22339887A patent/JPS6464811A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7183136B2 (en) | 2002-06-24 | 2007-02-27 | Toyoda Gosei Co., Ltd. | Semiconductor element and method for producing the same |
CN102059747A (en) * | 2010-08-25 | 2011-05-18 | 重庆川仪自动化股份有限公司 | Method for forming sapphire square hole |
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