JPS6462464A - Method for joining sputtering target - Google Patents

Method for joining sputtering target

Info

Publication number
JPS6462464A
JPS6462464A JP21883687A JP21883687A JPS6462464A JP S6462464 A JPS6462464 A JP S6462464A JP 21883687 A JP21883687 A JP 21883687A JP 21883687 A JP21883687 A JP 21883687A JP S6462464 A JPS6462464 A JP S6462464A
Authority
JP
Japan
Prior art keywords
target
sputtering target
sputtering
backing plate
blank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21883687A
Other languages
Japanese (ja)
Inventor
Chikao Yazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP21883687A priority Critical patent/JPS6462464A/en
Publication of JPS6462464A publication Critical patent/JPS6462464A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a sputtering target which does not crack and exfoliate by subjecting the sputtering target and backing plate prior to brazing to blank baking, thereby executing joining without forming a space part between both. CONSTITUTION:The target material which is a cast alloy of Nd, Dy, Fe, and Co worked to a specified size is ultrasonically cleaned by using an org. solvent. After this material is dried, Cr and Cu are deposited by evaporation at about 100 deg.C to the soldering surface by a vacuum deposition machine. The sputtering target after the vapor deposition is then blank-baked by increasing the temp. thereof up to 300 deg.C. The sputtering target after the blank baking is thereafter cooled in a vacuum. A brazing filler metal is set to a backing plate and the sputtering target is placed thereon and is heated until the target is heated up to 250 deg.C. The target is held for a specified period of time and is cooled, by which the backing plate and the target are joined. The space part in the adhered part is 3% in this case. The cracking, exfoliation, etc., are not generated when sputtering is executed.
JP21883687A 1987-09-01 1987-09-01 Method for joining sputtering target Pending JPS6462464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21883687A JPS6462464A (en) 1987-09-01 1987-09-01 Method for joining sputtering target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21883687A JPS6462464A (en) 1987-09-01 1987-09-01 Method for joining sputtering target

Publications (1)

Publication Number Publication Date
JPS6462464A true JPS6462464A (en) 1989-03-08

Family

ID=16726102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21883687A Pending JPS6462464A (en) 1987-09-01 1987-09-01 Method for joining sputtering target

Country Status (1)

Country Link
JP (1) JPS6462464A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03111564A (en) * 1989-06-15 1991-05-13 Hitachi Metals Ltd Target assembly for vapor deposition and its production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03111564A (en) * 1989-06-15 1991-05-13 Hitachi Metals Ltd Target assembly for vapor deposition and its production

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