JPS6461909A - Vapor growth method for compound semiconductor - Google Patents

Vapor growth method for compound semiconductor

Info

Publication number
JPS6461909A
JPS6461909A JP22063687A JP22063687A JPS6461909A JP S6461909 A JPS6461909 A JP S6461909A JP 22063687 A JP22063687 A JP 22063687A JP 22063687 A JP22063687 A JP 22063687A JP S6461909 A JPS6461909 A JP S6461909A
Authority
JP
Japan
Prior art keywords
oxide film
epitaxial layer
natural oxide
compound semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22063687A
Other languages
Japanese (ja)
Other versions
JPH0620052B2 (en
Inventor
Kikuo Makita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22063687A priority Critical patent/JPH0620052B2/en
Publication of JPS6461909A publication Critical patent/JPS6461909A/en
Publication of JPH0620052B2 publication Critical patent/JPH0620052B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To form an excellent epitaxial layer without being affected by a natural oxide film by surface-treating a compound semiconductor substrate containing an Sb element by using a chemical etching, introducing SbCl5 gas, completely removing the natural oxide film on the surface and shaping the epitaxial layer. CONSTITUTION:A chemically etched GaSb substrate 1 is placed onto a carbon susceptor, and the temperature of the substrate 1 is elevated up to a growth temperature of 560 deg.C through high-frequency heating. The temperature is raised, SbCl5 gas 2 is brought to a reaction atmosphere and introduced for approximately one min at approximately one Torr, and a thin natural oxide film 3 on the surface of the GaSb substrate is removed completely. TMSb and TMGa are induced, and a GaSb epitaxial layer 4 is shaped. Accordingly, the natural oxide film on the surface of the compound semiconductor substrate containing Sb as a constituent element can be gotten rid of perfectly. The epitaxial layer formed onto the substrate has excellent crystallizability.
JP22063687A 1987-09-02 1987-09-02 Vapor growth method of compound semiconductor Expired - Lifetime JPH0620052B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22063687A JPH0620052B2 (en) 1987-09-02 1987-09-02 Vapor growth method of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22063687A JPH0620052B2 (en) 1987-09-02 1987-09-02 Vapor growth method of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS6461909A true JPS6461909A (en) 1989-03-08
JPH0620052B2 JPH0620052B2 (en) 1994-03-16

Family

ID=16754076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22063687A Expired - Lifetime JPH0620052B2 (en) 1987-09-02 1987-09-02 Vapor growth method of compound semiconductor

Country Status (1)

Country Link
JP (1) JPH0620052B2 (en)

Also Published As

Publication number Publication date
JPH0620052B2 (en) 1994-03-16

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