JPS6461909A - Vapor growth method for compound semiconductor - Google Patents
Vapor growth method for compound semiconductorInfo
- Publication number
- JPS6461909A JPS6461909A JP22063687A JP22063687A JPS6461909A JP S6461909 A JPS6461909 A JP S6461909A JP 22063687 A JP22063687 A JP 22063687A JP 22063687 A JP22063687 A JP 22063687A JP S6461909 A JPS6461909 A JP S6461909A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- epitaxial layer
- natural oxide
- compound semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To form an excellent epitaxial layer without being affected by a natural oxide film by surface-treating a compound semiconductor substrate containing an Sb element by using a chemical etching, introducing SbCl5 gas, completely removing the natural oxide film on the surface and shaping the epitaxial layer. CONSTITUTION:A chemically etched GaSb substrate 1 is placed onto a carbon susceptor, and the temperature of the substrate 1 is elevated up to a growth temperature of 560 deg.C through high-frequency heating. The temperature is raised, SbCl5 gas 2 is brought to a reaction atmosphere and introduced for approximately one min at approximately one Torr, and a thin natural oxide film 3 on the surface of the GaSb substrate is removed completely. TMSb and TMGa are induced, and a GaSb epitaxial layer 4 is shaped. Accordingly, the natural oxide film on the surface of the compound semiconductor substrate containing Sb as a constituent element can be gotten rid of perfectly. The epitaxial layer formed onto the substrate has excellent crystallizability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22063687A JPH0620052B2 (en) | 1987-09-02 | 1987-09-02 | Vapor growth method of compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22063687A JPH0620052B2 (en) | 1987-09-02 | 1987-09-02 | Vapor growth method of compound semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6461909A true JPS6461909A (en) | 1989-03-08 |
JPH0620052B2 JPH0620052B2 (en) | 1994-03-16 |
Family
ID=16754076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22063687A Expired - Lifetime JPH0620052B2 (en) | 1987-09-02 | 1987-09-02 | Vapor growth method of compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0620052B2 (en) |
-
1987
- 1987-09-02 JP JP22063687A patent/JPH0620052B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0620052B2 (en) | 1994-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Heinecke et al. | Selective growth of GaAs in the MOMBE and MOCVD systems | |
KR100284374B1 (en) | Method of Forming Crystalline Silicon Carbide Film | |
CN106868472A (en) | The growing method and gallium nitride lasers of a kind of nitride epitaxial piece | |
EP0164928A3 (en) | Vertical hot wall cvd reactor | |
Caneau et al. | Etching of InP by HCl in an OMVPE reactor | |
US4661199A (en) | Method to inhibit autodoping in epitaxial layers from heavily doped substrates in CVD processing | |
JPS6461909A (en) | Vapor growth method for compound semiconductor | |
JPS5271171A (en) | Production of epitaxial wafer | |
EP0205034B1 (en) | Chemical vapor deposition method for the gaas thin film | |
JPS53126263A (en) | Method of epitaxially growing gallium arsenide layer on gallium arsenide body | |
JPS577923A (en) | Manufacture of receiving table for processing single silicon crystal wafer | |
JPS6481312A (en) | Vapor phase growth method of compound semiconductor | |
JPS5434676A (en) | Vapor growth method and apparatus for high-purity semiconductor layer | |
JP2528912B2 (en) | Semiconductor growth equipment | |
JPS617622A (en) | Manufacture of semiconductor device | |
JP3080860B2 (en) | Dry etching method | |
JPS56124228A (en) | Method for low-tension epitaxial growth | |
GB2019644A (en) | Producing epitaxial layers | |
JPS56162841A (en) | Forming method for insulating film of compound semiconductor | |
JPS6477924A (en) | Manufacture of semiconductor device | |
JP2656029B2 (en) | Crystal growth equipment | |
JPS54106081A (en) | Growth method in vapor phase | |
JPS56130940A (en) | Manufacture of semiconductor device | |
JPS5547381A (en) | Plasma etching method | |
JPS5748227A (en) | Manufacture of semiconductor device |