JPS6460926A - Manufacture of oxide superconductive thin film - Google Patents
Manufacture of oxide superconductive thin filmInfo
- Publication number
- JPS6460926A JPS6460926A JP62218890A JP21889087A JPS6460926A JP S6460926 A JPS6460926 A JP S6460926A JP 62218890 A JP62218890 A JP 62218890A JP 21889087 A JP21889087 A JP 21889087A JP S6460926 A JPS6460926 A JP S6460926A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- intermediate electrode
- thin film
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
PURPOSE:To enhance the thin film growing speed by introducing a test gas containing powder of oxide superconductive component material in plasma, and by spraying the plasma having gasified oxide superconductive component material to the base board. CONSTITUTION:Vacuum exhaust is made from a vacuum draw hole 7, and a gas 8, for ex. argon gas, is introduced to a discharge chamber 1 from a main gas lead-in hole 6, and a DC voltage is impressed between a cathode 2 and an intermediate electrode 10. This gas is electrolytically dissociated by glow discharge or arc discharge generated between the cathode 2 and intermediate electrode 10 and turned into plasma. It passes through an intermediate electrode hole 11 and flows into the space between the intermediate electrode 10 and anode 4. Test gases 16-18 containing component material powder for oxide superconductor, for ex. lanthanum oxide, and argon gas to carry it are led in from test gas lead-in holes 13-15. The gases become plasma, and the powder is gasified. This mixed plasma flows into a vacuum chamber 12, and electrolytic dissociated gas jet 19 is formed. An oxide superconductive thin film is grown on a base board arranged oppositely.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62218890A JPS6460926A (en) | 1987-08-31 | 1987-08-31 | Manufacture of oxide superconductive thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62218890A JPS6460926A (en) | 1987-08-31 | 1987-08-31 | Manufacture of oxide superconductive thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6460926A true JPS6460926A (en) | 1989-03-08 |
Family
ID=16726906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62218890A Pending JPS6460926A (en) | 1987-08-31 | 1987-08-31 | Manufacture of oxide superconductive thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6460926A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1041863A1 (en) * | 1999-04-01 | 2000-10-04 | Commissariat A L'energie Atomique | Plasma cell |
-
1987
- 1987-08-31 JP JP62218890A patent/JPS6460926A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1041863A1 (en) * | 1999-04-01 | 2000-10-04 | Commissariat A L'energie Atomique | Plasma cell |
FR2791859A1 (en) * | 1999-04-01 | 2000-10-06 | Commissariat Energie Atomique | PLASMA CELL |
US6507149B1 (en) | 1999-04-01 | 2003-01-14 | Commissariat A L 'energie Atomique | Plasma cell |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2061158A1 (en) | Plasma spray apparatus for spraying powdery or gaseous material | |
DE59205803D1 (en) | Plasma spraying device for spraying powdered or gaseous material | |
CA1269061C (en) | Process for the production of diamond-like carbon coatings | |
EP0885981A3 (en) | Process and apparatus for treating substrates by means of ions produced by low voltage arc discharge | |
DE3873729D1 (en) | GAS ELECTRONIC SWITCH (PSEUDO SPARK SWITCH). | |
GB2058843B (en) | Method for the manufacture of goldcoloured coatings | |
ES8708093A1 (en) | Vertical apparatus for continuous deposition of semiconductor alloys. | |
US4965248A (en) | Method of fabricating thin layers from high-temperature oxide superconductors | |
JPS6460926A (en) | Manufacture of oxide superconductive thin film | |
KR100356565B1 (en) | Thin film growth method and apparatus for forming magnesium oxide thin film at increased thin film growth rate | |
JPS6442574A (en) | Arc power source device for vacuum arc discharge type pvd device | |
JPS57131373A (en) | Plasma etching device | |
GB1145570A (en) | Plasma jet torch | |
JPS57161057A (en) | Chemical vapor phase growth device using plasma | |
GB1202572A (en) | Methods of and apparatus for generating reactive gas plasmas | |
JPS6431976A (en) | Plasma cvd device | |
JPS6428297A (en) | Vapor phase synthesis of diamond | |
EP0834593A3 (en) | Plasma thin-film forming apparatus and method | |
JPS6431974A (en) | Production of diamond-like carbon film | |
JPS5594473A (en) | Ion plating apparatus for multi-component coating | |
ATE189747T1 (en) | CIRCUIT ARRANGEMENT FOR POWER SUPPLY FOR PULSE OPERATED VACUUM ARC | |
JPS6421080A (en) | Plasma cvd device | |
CA2191625A1 (en) | A process for the electrolytic separation of oxygen from its mixtures and equipment to perform this process | |
JPS55110774A (en) | High vacuum ion plating apparatus | |
JPS57136747A (en) | Fluorescent display tube |