JPS6454639A - Field emission cathode - Google Patents
Field emission cathodeInfo
- Publication number
- JPS6454639A JPS6454639A JP21174487A JP21174487A JPS6454639A JP S6454639 A JPS6454639 A JP S6454639A JP 21174487 A JP21174487 A JP 21174487A JP 21174487 A JP21174487 A JP 21174487A JP S6454639 A JPS6454639 A JP S6454639A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- emission
- electrode part
- gate layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
PURPOSE:To heat an electrode at need, purify the surface, stabilize its characteristic and make the emission of an electron so easily by forming a heater around the vicinity of an emissive electrode part in an inner surface almost parallel with an opening surface of a gate layer. CONSTITUTION:Each emission site 11 arranged in matrix form is made up of forming a gate layer 14 consisting of Mo in a substrate 12 consisting of conductive Si via an insulating layer 13 consisting of SiO2 and setting up each emitter tip 16 consisting of Mo in an emission hole 15 formed in the gate layer 14 and on the exposed substrate 12. A heater 20 is formed around an emissive electrode part 10 made up of stacking a lot of the emission sites 11, and connecting pads 21, 22 are formed at both ends of the heater. When this electrode part 10 is heated by the heater 20, a gas molecule being absorbed is separated therefrom so that even if field strength to be imposed on the emitter tip 16 is relatively small, an electron beam is easily emitted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21174487A JP2607251B2 (en) | 1987-08-26 | 1987-08-26 | Field emission cathode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21174487A JP2607251B2 (en) | 1987-08-26 | 1987-08-26 | Field emission cathode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6454639A true JPS6454639A (en) | 1989-03-02 |
JP2607251B2 JP2607251B2 (en) | 1997-05-07 |
Family
ID=16610867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21174487A Expired - Fee Related JP2607251B2 (en) | 1987-08-26 | 1987-08-26 | Field emission cathode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2607251B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03190034A (en) * | 1989-12-19 | 1991-08-20 | Matsushita Electric Ind Co Ltd | Electron emitting element and its manufacture |
FR2663462A1 (en) * | 1990-06-13 | 1991-12-20 | Commissariat Energie Atomique | SOURCE OF ELECTRON WITH EMISSIVE MICROPOINT CATHODES. |
JPH06223705A (en) * | 1993-01-27 | 1994-08-12 | Nec Corp | Cold cathode element |
JPH0714501A (en) * | 1993-06-22 | 1995-01-17 | Nec Corp | Field emission cold cathode and electron gun therewith |
FR2714208A1 (en) * | 1993-12-22 | 1995-06-23 | Mitsubishi Electric Corp | cathode in CRT electron gun structure |
JPH07296717A (en) * | 1994-04-26 | 1995-11-10 | Nec Corp | Electric field discharging type cold negative electrode |
FR2792770A1 (en) * | 1999-04-22 | 2000-10-27 | Cit Alcatel | Increased vacuum residual pressure micropoint electron emission generator having cathode and interspersed electrons with rear heating element maintaining temperature above ambient. |
WO2012108161A1 (en) * | 2011-02-09 | 2012-08-16 | 株式会社鬼塚硝子 | Cold cathode device and method for manufacturing same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5335363A (en) * | 1976-09-13 | 1978-04-01 | Hitachi Ltd | Field radiation type cathode |
JPS53121454A (en) * | 1977-03-31 | 1978-10-23 | Toshiba Corp | Electron source of thin film electric field emission type and its manufacture |
-
1987
- 1987-08-26 JP JP21174487A patent/JP2607251B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5335363A (en) * | 1976-09-13 | 1978-04-01 | Hitachi Ltd | Field radiation type cathode |
JPS53121454A (en) * | 1977-03-31 | 1978-10-23 | Toshiba Corp | Electron source of thin film electric field emission type and its manufacture |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03190034A (en) * | 1989-12-19 | 1991-08-20 | Matsushita Electric Ind Co Ltd | Electron emitting element and its manufacture |
FR2663462A1 (en) * | 1990-06-13 | 1991-12-20 | Commissariat Energie Atomique | SOURCE OF ELECTRON WITH EMISSIVE MICROPOINT CATHODES. |
JPH06223705A (en) * | 1993-01-27 | 1994-08-12 | Nec Corp | Cold cathode element |
JPH0714501A (en) * | 1993-06-22 | 1995-01-17 | Nec Corp | Field emission cold cathode and electron gun therewith |
FR2714208A1 (en) * | 1993-12-22 | 1995-06-23 | Mitsubishi Electric Corp | cathode in CRT electron gun structure |
JPH07296717A (en) * | 1994-04-26 | 1995-11-10 | Nec Corp | Electric field discharging type cold negative electrode |
FR2792770A1 (en) * | 1999-04-22 | 2000-10-27 | Cit Alcatel | Increased vacuum residual pressure micropoint electron emission generator having cathode and interspersed electrons with rear heating element maintaining temperature above ambient. |
US6559442B1 (en) | 1999-04-22 | 2003-05-06 | Alcatel | High-pressure operation of a field-emission cold cathode |
WO2012108161A1 (en) * | 2011-02-09 | 2012-08-16 | 株式会社鬼塚硝子 | Cold cathode device and method for manufacturing same |
Also Published As
Publication number | Publication date |
---|---|
JP2607251B2 (en) | 1997-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |