JPS6454639A - Field emission cathode - Google Patents

Field emission cathode

Info

Publication number
JPS6454639A
JPS6454639A JP21174487A JP21174487A JPS6454639A JP S6454639 A JPS6454639 A JP S6454639A JP 21174487 A JP21174487 A JP 21174487A JP 21174487 A JP21174487 A JP 21174487A JP S6454639 A JPS6454639 A JP S6454639A
Authority
JP
Japan
Prior art keywords
heater
emission
electrode part
gate layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21174487A
Other languages
Japanese (ja)
Other versions
JP2607251B2 (en
Inventor
Yukihiro Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP21174487A priority Critical patent/JP2607251B2/en
Publication of JPS6454639A publication Critical patent/JPS6454639A/en
Application granted granted Critical
Publication of JP2607251B2 publication Critical patent/JP2607251B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Cold Cathode And The Manufacture (AREA)

Abstract

PURPOSE:To heat an electrode at need, purify the surface, stabilize its characteristic and make the emission of an electron so easily by forming a heater around the vicinity of an emissive electrode part in an inner surface almost parallel with an opening surface of a gate layer. CONSTITUTION:Each emission site 11 arranged in matrix form is made up of forming a gate layer 14 consisting of Mo in a substrate 12 consisting of conductive Si via an insulating layer 13 consisting of SiO2 and setting up each emitter tip 16 consisting of Mo in an emission hole 15 formed in the gate layer 14 and on the exposed substrate 12. A heater 20 is formed around an emissive electrode part 10 made up of stacking a lot of the emission sites 11, and connecting pads 21, 22 are formed at both ends of the heater. When this electrode part 10 is heated by the heater 20, a gas molecule being absorbed is separated therefrom so that even if field strength to be imposed on the emitter tip 16 is relatively small, an electron beam is easily emitted.
JP21174487A 1987-08-26 1987-08-26 Field emission cathode Expired - Fee Related JP2607251B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21174487A JP2607251B2 (en) 1987-08-26 1987-08-26 Field emission cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21174487A JP2607251B2 (en) 1987-08-26 1987-08-26 Field emission cathode

Publications (2)

Publication Number Publication Date
JPS6454639A true JPS6454639A (en) 1989-03-02
JP2607251B2 JP2607251B2 (en) 1997-05-07

Family

ID=16610867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21174487A Expired - Fee Related JP2607251B2 (en) 1987-08-26 1987-08-26 Field emission cathode

Country Status (1)

Country Link
JP (1) JP2607251B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190034A (en) * 1989-12-19 1991-08-20 Matsushita Electric Ind Co Ltd Electron emitting element and its manufacture
FR2663462A1 (en) * 1990-06-13 1991-12-20 Commissariat Energie Atomique SOURCE OF ELECTRON WITH EMISSIVE MICROPOINT CATHODES.
JPH06223705A (en) * 1993-01-27 1994-08-12 Nec Corp Cold cathode element
JPH0714501A (en) * 1993-06-22 1995-01-17 Nec Corp Field emission cold cathode and electron gun therewith
FR2714208A1 (en) * 1993-12-22 1995-06-23 Mitsubishi Electric Corp cathode in CRT electron gun structure
JPH07296717A (en) * 1994-04-26 1995-11-10 Nec Corp Electric field discharging type cold negative electrode
FR2792770A1 (en) * 1999-04-22 2000-10-27 Cit Alcatel Increased vacuum residual pressure micropoint electron emission generator having cathode and interspersed electrons with rear heating element maintaining temperature above ambient.
WO2012108161A1 (en) * 2011-02-09 2012-08-16 株式会社鬼塚硝子 Cold cathode device and method for manufacturing same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5335363A (en) * 1976-09-13 1978-04-01 Hitachi Ltd Field radiation type cathode
JPS53121454A (en) * 1977-03-31 1978-10-23 Toshiba Corp Electron source of thin film electric field emission type and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5335363A (en) * 1976-09-13 1978-04-01 Hitachi Ltd Field radiation type cathode
JPS53121454A (en) * 1977-03-31 1978-10-23 Toshiba Corp Electron source of thin film electric field emission type and its manufacture

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190034A (en) * 1989-12-19 1991-08-20 Matsushita Electric Ind Co Ltd Electron emitting element and its manufacture
FR2663462A1 (en) * 1990-06-13 1991-12-20 Commissariat Energie Atomique SOURCE OF ELECTRON WITH EMISSIVE MICROPOINT CATHODES.
JPH06223705A (en) * 1993-01-27 1994-08-12 Nec Corp Cold cathode element
JPH0714501A (en) * 1993-06-22 1995-01-17 Nec Corp Field emission cold cathode and electron gun therewith
FR2714208A1 (en) * 1993-12-22 1995-06-23 Mitsubishi Electric Corp cathode in CRT electron gun structure
JPH07296717A (en) * 1994-04-26 1995-11-10 Nec Corp Electric field discharging type cold negative electrode
FR2792770A1 (en) * 1999-04-22 2000-10-27 Cit Alcatel Increased vacuum residual pressure micropoint electron emission generator having cathode and interspersed electrons with rear heating element maintaining temperature above ambient.
US6559442B1 (en) 1999-04-22 2003-05-06 Alcatel High-pressure operation of a field-emission cold cathode
WO2012108161A1 (en) * 2011-02-09 2012-08-16 株式会社鬼塚硝子 Cold cathode device and method for manufacturing same

Also Published As

Publication number Publication date
JP2607251B2 (en) 1997-05-07

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees