JPS6450920A - Local bodily temperature sensor - Google Patents
Local bodily temperature sensorInfo
- Publication number
- JPS6450920A JPS6450920A JP62206311A JP20631187A JPS6450920A JP S6450920 A JPS6450920 A JP S6450920A JP 62206311 A JP62206311 A JP 62206311A JP 20631187 A JP20631187 A JP 20631187A JP S6450920 A JPS6450920 A JP S6450920A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- film
- electrode
- temperature sensor
- high sensitivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring And Recording Apparatus For Diagnosis (AREA)
Abstract
PURPOSE:To obtain a bodily temperature sensor having high sensitivity and a fast response speed, by measuring a change in a tunnel current flowing through a Josephson junction. CONSTITUTION:Platinum electrode patterns 12-1-12-4 are formed on a silicon substrate 11 of a temperature detecting element 4, while a thin film 13 is formed of a superconducting material for mediating between the electrodes 12-2 and 12-4 and an Si3N4 film 15 about 5nm thick is formed in the central part. Next an aluminum (Al) film 14 is formed for mediating between the electrodes 12-1 and 12-3, and lastly an SiO2 film 16 is formed as a protecting film. When a voltage is impressed on 12-1 and 12-4 so that a tunnel current may flow from the electrode 12-2 to the electrode 12-3, this tunnel current is varied in a large degree by temperature, and therefore a change in the temperature is detected with high sensitivity. Besides, the temperature in the depths of the body can be measured with high sensitivity and excellent responsiveness by constructing a catheter-type temperature sensor in such a manner that the detecting element 3 is provided in a window part 12, a lead wire 4 is led out of each electrode of the detecting element and silicon rubber 5 is packed inside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206311A JPS6450920A (en) | 1987-08-21 | 1987-08-21 | Local bodily temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206311A JPS6450920A (en) | 1987-08-21 | 1987-08-21 | Local bodily temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450920A true JPS6450920A (en) | 1989-02-27 |
Family
ID=16521199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62206311A Pending JPS6450920A (en) | 1987-08-21 | 1987-08-21 | Local bodily temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450920A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106679843A (en) * | 2016-12-02 | 2017-05-17 | 中国科学院计算技术研究所 | Film temperature sensor withstanding piezoresistive effects and method for detecting temperature |
-
1987
- 1987-08-21 JP JP62206311A patent/JPS6450920A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106679843A (en) * | 2016-12-02 | 2017-05-17 | 中国科学院计算技术研究所 | Film temperature sensor withstanding piezoresistive effects and method for detecting temperature |
| CN106679843B (en) * | 2016-12-02 | 2019-07-30 | 中国科学院计算技术研究所 | A kind of film temperature sensor of resistance to compression inhibition effect and the method for detecting temperature |
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