JPS6450519A - Apparatus for liquid growth of semiconductor crystal - Google Patents

Apparatus for liquid growth of semiconductor crystal

Info

Publication number
JPS6450519A
JPS6450519A JP20775387A JP20775387A JPS6450519A JP S6450519 A JPS6450519 A JP S6450519A JP 20775387 A JP20775387 A JP 20775387A JP 20775387 A JP20775387 A JP 20775387A JP S6450519 A JPS6450519 A JP S6450519A
Authority
JP
Japan
Prior art keywords
tube
semiconductor crystal
internal heat
heat sink
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20775387A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0261137B2 (enrdf_load_html_response
Inventor
Takahiro Kanba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP20775387A priority Critical patent/JPS6450519A/ja
Publication of JPS6450519A publication Critical patent/JPS6450519A/ja
Publication of JPH0261137B2 publication Critical patent/JPH0261137B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP20775387A 1987-08-21 1987-08-21 Apparatus for liquid growth of semiconductor crystal Granted JPS6450519A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20775387A JPS6450519A (en) 1987-08-21 1987-08-21 Apparatus for liquid growth of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20775387A JPS6450519A (en) 1987-08-21 1987-08-21 Apparatus for liquid growth of semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS6450519A true JPS6450519A (en) 1989-02-27
JPH0261137B2 JPH0261137B2 (enrdf_load_html_response) 1990-12-19

Family

ID=16544973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20775387A Granted JPS6450519A (en) 1987-08-21 1987-08-21 Apparatus for liquid growth of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS6450519A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPH0261137B2 (enrdf_load_html_response) 1990-12-19

Similar Documents

Publication Publication Date Title
JPS6450519A (en) Apparatus for liquid growth of semiconductor crystal
JPS6450518A (en) Apparatus for liquid growth of semiconductor crystal
JPS549592A (en) Luminous semiconductor element
GB844542A (en) Process and apparatus for growing crystalline boules
ES8102996A1 (es) Aparato para formar fibras de vidrio
JPS5637293A (en) Single crystal manufacturing refractory crucible
JPS5633886A (en) Light drive semiconductor device
JPS6447020A (en) Heat treatment device for manufacturing semiconductor
JPS6461381A (en) Method for growing single crystal
JPS54102967A (en) Gas-phase crystal growth method for multiple semiconductor
JPS5645031A (en) Etching method
JPS5559786A (en) Light semiconductor device
KR840004349A (ko) 가스충전 용기조림의 제법
JPS5427767A (en) Single crystal growing method of multielement semiconductors
JPH0357961U (enrdf_load_html_response)
SU133238A1 (ru) Тигель дл выт гивани монокристаллов полупроводниковых материалов
JPS61281095A (ja) 結晶成長用アンプル
GB1487333A (en) Method for vapour growing crystals
JPS5676525A (en) Liquid phase epitaxial growth device
JPS5674906A (en) Very low temperature cooling apparatus
SU146282A1 (ru) Устройство дл наращивани монокристаллических пленок из паровой фазы вещества
JPS57136149A (en) Device for supporting low temperature sample in x ray diffraction device
JPS5567598A (en) Single crystal growing method
RU2048620C1 (ru) Устройство для выращивания кристаллов
JPS57161000A (en) Container for growing crystal