JPS6450489A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6450489A
JPS6450489A JP20788887A JP20788887A JPS6450489A JP S6450489 A JPS6450489 A JP S6450489A JP 20788887 A JP20788887 A JP 20788887A JP 20788887 A JP20788887 A JP 20788887A JP S6450489 A JPS6450489 A JP S6450489A
Authority
JP
Japan
Prior art keywords
layer
inp
semiconductor laser
reduce
whole length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20788887A
Other languages
Japanese (ja)
Inventor
Akira Mita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20788887A priority Critical patent/JPS6450489A/en
Publication of JPS6450489A publication Critical patent/JPS6450489A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce an oscillation threshold value and to remarkably widen an application range by a method wherein an active layer is divided in two in a longitudinal direction, and its part is doped with Er atoms. CONSTITUTION:A structure having a barrier layer 3 made of InP, an active layer 4 made of InGaAsP, and an upper barrier layer 5 made InP is provided through a buffer layer 2 on a crystalline substrate 1, and 1 atomic % of Er is contained in the half part 6 of the whole length of the layer. Thus, its threshold current value becomes substantially similar to that of a semiconductor laser which contains no Er. In order to sufficiently perform this effect, it is necessary to set the Er-doping region to a range of 1/4-3/4 of the whole length of the layer. Thus, the wavelength selecting effect is accelerated to reduce its threshold value.
JP20788887A 1987-08-20 1987-08-20 Semiconductor laser Pending JPS6450489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20788887A JPS6450489A (en) 1987-08-20 1987-08-20 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20788887A JPS6450489A (en) 1987-08-20 1987-08-20 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6450489A true JPS6450489A (en) 1989-02-27

Family

ID=16547227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20788887A Pending JPS6450489A (en) 1987-08-20 1987-08-20 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6450489A (en)

Similar Documents

Publication Publication Date Title
JPS5752186A (en) Semiconductor laser
ATE38742T1 (en) SELECTIVE ETCHING PROCESS FOR A SEMICONDUCTOR MULTILAYER STRUCTURE.
JPS5286093A (en) Striped semiconductor laser
SG47931A1 (en) Semiconductor structures and a method of manufacturing semiconductor structures
DE3379442D1 (en) Double heterostructure semiconductor laser with periodic structure formed in guide layer
JPS6450489A (en) Semiconductor laser
JPS6453582A (en) Variable capacitance diode device
JPS5771191A (en) Photosemiconductor element
EP0177141A2 (en) Semiconductor lasers
JPS5356986A (en) Semiconductor laser
JPS5671987A (en) Semiconductor laser
JPS5451491A (en) Semiconductor laser
JPS5336189A (en) Semiconductor junction laser
JPS57162382A (en) Semiconductor laser
JPS57112090A (en) Semiconductor laser
JPS6431477A (en) Finely working method for superconductor
JPS5391682A (en) Semiconductor laser
JPS6450590A (en) Semiconductor laser
JPS6461082A (en) Semiconductor laser element
Kitayama et al. Structural optimization for interferometric coupled-waveguide semiconductor laser
JPS57139986A (en) Manufacure of semiconductor laser
KR930020784A (en) Manufacturing method of semiconductor laser diode
JPS6437889A (en) Semiconductor laser
JPS5763880A (en) Lateral distribution feedback type semiconductor laser
JPS52106284A (en) Semiconductor laser unit