JPS6450409A - Manufacture of semiconductor single crystal layer - Google Patents

Manufacture of semiconductor single crystal layer

Info

Publication number
JPS6450409A
JPS6450409A JP20626787A JP20626787A JPS6450409A JP S6450409 A JPS6450409 A JP S6450409A JP 20626787 A JP20626787 A JP 20626787A JP 20626787 A JP20626787 A JP 20626787A JP S6450409 A JPS6450409 A JP S6450409A
Authority
JP
Japan
Prior art keywords
scanning
single crystal
crystal layer
scanning speed
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20626787A
Other languages
Japanese (ja)
Other versions
JP2526378B2 (en
Inventor
Masahito Kenmochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62206267A priority Critical patent/JP2526378B2/en
Publication of JPS6450409A publication Critical patent/JPS6450409A/en
Application granted granted Critical
Publication of JP2526378B2 publication Critical patent/JP2526378B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To make it possible to form an excellent semiconductor single crystal layer having a large area on an insulating film, by arbitrarily changing a scanning speed within each scanning line, and making the scanning speed at the initial period after the start of scanning within at least each scanning line slower than the succeeding scanning speed. CONSTITUTION:The data of the scanning sequence of a beam and the scanning speed within each scanning line are stored in a computer 21 and temporarily stored in a buffer 22. When the beam is scanned, the data, which are stored in the buffer temporarily, are read out. Deflecting signals are imparted to deflectors 14 and 15 from an X power source 23 and a Y power source 24. The scanning speed at the initial period of projection is slow. The speed is gradually increased in this method. A part, which has been hard to fuse at the initial period of the projection due to thermal diffusion, can be fused like the central part since the projecting time of the beam becomes long. Thus, a semiconductor single crystal layer characterized by a large area and excellent quality can be formed on an insulating film.
JP62206267A 1987-08-21 1987-08-21 Method for manufacturing semiconductor single crystal layer Expired - Lifetime JP2526378B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206267A JP2526378B2 (en) 1987-08-21 1987-08-21 Method for manufacturing semiconductor single crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206267A JP2526378B2 (en) 1987-08-21 1987-08-21 Method for manufacturing semiconductor single crystal layer

Publications (2)

Publication Number Publication Date
JPS6450409A true JPS6450409A (en) 1989-02-27
JP2526378B2 JP2526378B2 (en) 1996-08-21

Family

ID=16520499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206267A Expired - Lifetime JP2526378B2 (en) 1987-08-21 1987-08-21 Method for manufacturing semiconductor single crystal layer

Country Status (1)

Country Link
JP (1) JP2526378B2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605513A (en) * 1983-06-23 1985-01-12 Fujitsu Ltd Electron beam annealing device
JPS6088424A (en) * 1983-10-21 1985-05-18 Agency Of Ind Science & Technol Method for beam annealing
JPS60176221A (en) * 1984-02-22 1985-09-10 Nec Corp Method and device for beam annealing
JPS6245016A (en) * 1985-08-22 1987-02-27 Sony Corp Method for recrystallization of semiconductor thin film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605513A (en) * 1983-06-23 1985-01-12 Fujitsu Ltd Electron beam annealing device
JPS6088424A (en) * 1983-10-21 1985-05-18 Agency Of Ind Science & Technol Method for beam annealing
JPS60176221A (en) * 1984-02-22 1985-09-10 Nec Corp Method and device for beam annealing
JPS6245016A (en) * 1985-08-22 1987-02-27 Sony Corp Method for recrystallization of semiconductor thin film

Also Published As

Publication number Publication date
JP2526378B2 (en) 1996-08-21

Similar Documents

Publication Publication Date Title
JPS57171337A (en) Production of halftone plate picture
EP0309292A3 (en) Circuit transformation system, circuit transformation method, inverted logic generation method, and logic design system
JPS5726962A (en) Photoradiation method for recorder
JPS6450409A (en) Manufacture of semiconductor single crystal layer
EP0147417A4 (en) Phase-locked semiconductor laser array and a method of making same.
JPS5672461A (en) Picture recording method on light scanning system
JPS5323570A (en) Forming method of minute conductive regions to semicond uctor element chip surface
JPS6450408A (en) Manufacture of semiconductor single crystal layer
JPS6460101A (en) Electronic scanning antenna
JPS572027A (en) Multibeam recorder
JP2595979B2 (en) High-speed image reader
JPS52109373A (en) Method of deflecting and scanning electron beam
JPS5342047A (en) Scanner of optical beam
JPH07118446B2 (en) Method for manufacturing semiconductor single crystal layer
JPS5310292A (en) Production of semiconductor laser device
JPS5322356A (en) Scanning type electron microscope
JPS55163842A (en) Method for electron beam exposure
JPS6025759Y2 (en) magnetic bubble element
JPS57162434A (en) Annealing method for single crystal wafer
JPS56142631A (en) Manufacture of semiconductor device
JPS5627171A (en) Picture forming device using optical fiber tube
JPS5759387A (en) Semiconductor storage device
JPS5727026A (en) Ion implantation
JPS6432686A (en) Manufacture of avalanche type semiconductor photodetector
JPS5377461A (en) Filleting method of semiconductor wafer

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term