JPS6449201A - Voltage-dependent nonlinear resistor - Google Patents
Voltage-dependent nonlinear resistorInfo
- Publication number
- JPS6449201A JPS6449201A JP62207071A JP20707187A JPS6449201A JP S6449201 A JPS6449201 A JP S6449201A JP 62207071 A JP62207071 A JP 62207071A JP 20707187 A JP20707187 A JP 20707187A JP S6449201 A JPS6449201 A JP S6449201A
- Authority
- JP
- Japan
- Prior art keywords
- bi2o3
- sintered material
- bismuth
- additive
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
Abstract
PURPOSE:To obtain a thermally stable varistor which does not transit up to approx. 1000 deg.C by employing 50% or more of total bismuth of pyrochlore type compound as segregate interposed in grain boundary segregated part of crystal grains in a sintered material. CONSTITUTION:Ceramic powder containing at least one type selected from CaO, BaO, SrO, PbO, La2O3, Ce2O3, Pr2O3, Nd2O3, Pm2O3, Sm2O3, Eu2O3, Gd2O3, Dy2O3, Ho2O3 as metal additive in a material containing as main ingredients ZnO, MgO, and as sub ingredients at least Bi2O3, Nb2O5 of Bi2O3, Nb2O3, Sb2O3. CoO. Cr2O3, NiO, MnO in such a manner that the relationships between the additive and bismuth, and between niobium and the mismuth are Me/Bi=0.05-0.5, Nb/Bi=0.2-2.0, containing 0.05-1.0mol% of Bi2O3 is granulated, baked at 1000-1300 deg.C to obtain a plate-like sintered material. Both side surfaces of the sintered material are seized, plated or metallized with silver, thereby forming an electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62207071A JPS6449201A (en) | 1987-08-19 | 1987-08-19 | Voltage-dependent nonlinear resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62207071A JPS6449201A (en) | 1987-08-19 | 1987-08-19 | Voltage-dependent nonlinear resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6449201A true JPS6449201A (en) | 1989-02-23 |
Family
ID=16533719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62207071A Pending JPS6449201A (en) | 1987-08-19 | 1987-08-19 | Voltage-dependent nonlinear resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6449201A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107004596A (en) * | 2014-12-24 | 2017-08-01 | 国立大学法人北陆先端科学技术大学院大学 | Oxide dielectric body and its manufacture method, the precursor of oxide dielectric body and solid state electronic devices and its manufacture method |
US10798790B2 (en) | 2012-03-14 | 2020-10-06 | Microwave Materials Technologies, Inc. | Enhanced microwave system utilizing tilted launchers |
-
1987
- 1987-08-19 JP JP62207071A patent/JPS6449201A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10798790B2 (en) | 2012-03-14 | 2020-10-06 | Microwave Materials Technologies, Inc. | Enhanced microwave system utilizing tilted launchers |
CN107004596A (en) * | 2014-12-24 | 2017-08-01 | 国立大学法人北陆先端科学技术大学院大学 | Oxide dielectric body and its manufacture method, the precursor of oxide dielectric body and solid state electronic devices and its manufacture method |
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