JPS6447017A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6447017A
JPS6447017A JP20356787A JP20356787A JPS6447017A JP S6447017 A JPS6447017 A JP S6447017A JP 20356787 A JP20356787 A JP 20356787A JP 20356787 A JP20356787 A JP 20356787A JP S6447017 A JPS6447017 A JP S6447017A
Authority
JP
Japan
Prior art keywords
gas
jig
semispherical
leading
quartz tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20356787A
Other languages
Japanese (ja)
Inventor
Masaki Nakamura
Nobuo Fujie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20356787A priority Critical patent/JPS6447017A/en
Publication of JPS6447017A publication Critical patent/JPS6447017A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the substitution of gas by mixing gasses evenly by a method wherein the tubular part of a heat-resistant jig with its end semispherically expanded is engaged with a gas leading-in part of a quartz tube while leading-in gas is agitated in the semispherical parts of the jig to be led in the quartz tube as laminar flow. CONSTITUTION:A jig 21 comprising a tubular part 22 and an expanding semispherical part 23 is manufactured so that the tubular part 22 may be engaged with a gas leading-in part 11a of a quartz tube 11 as well as the jig 21 may open a door 17 to be engaged with the gas leading-in part 11a of the quartz tube 11. The outlet end 24 of expanded part in medium density is porous- structured while the tubular part 22 and the spherical part of the semispherical part in high density is gas intransmissive-structured. When the jig 21 is filled with leading-in gas and grain dust 25, the dust 25 is arrested inside the porous outlet end 24 to feed the furnace with clean gas 26. In such a constitution, the gas led in the semispherical part 23 as turbulence can be decelerated in the semispherical part to be sufficiently agitated for feeding to the furnace as laminar flow.
JP20356787A 1987-08-18 1987-08-18 Manufacture of semiconductor device Pending JPS6447017A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20356787A JPS6447017A (en) 1987-08-18 1987-08-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20356787A JPS6447017A (en) 1987-08-18 1987-08-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6447017A true JPS6447017A (en) 1989-02-21

Family

ID=16476265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20356787A Pending JPS6447017A (en) 1987-08-18 1987-08-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6447017A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007521633A (en) * 2003-08-20 2007-08-02 ビーコ・インストゥルメンツ・インコーポレイテッド Alkyl push airflow for vertical flow rotating disk reactor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284915A (en) * 1985-06-11 1986-12-15 Matsushita Electric Ind Co Ltd Thin film vapor growth apparatus
JPS62111418A (en) * 1985-11-08 1987-05-22 Matsushita Electric Ind Co Ltd Vapor growth apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284915A (en) * 1985-06-11 1986-12-15 Matsushita Electric Ind Co Ltd Thin film vapor growth apparatus
JPS62111418A (en) * 1985-11-08 1987-05-22 Matsushita Electric Ind Co Ltd Vapor growth apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007521633A (en) * 2003-08-20 2007-08-02 ビーコ・インストゥルメンツ・インコーポレイテッド Alkyl push airflow for vertical flow rotating disk reactor
US9982362B2 (en) 2003-08-20 2018-05-29 Veeco Instruments Inc. Density-matching alkyl push flow for vertical flow rotating disk reactors
US10364509B2 (en) 2003-08-20 2019-07-30 Veeco Instruments Inc. Alkyl push flow for vertical flow rotating disk reactors

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