JPS6445167A - Gradient base transistor - Google Patents
Gradient base transistorInfo
- Publication number
- JPS6445167A JPS6445167A JP20292787A JP20292787A JPS6445167A JP S6445167 A JPS6445167 A JP S6445167A JP 20292787 A JP20292787 A JP 20292787A JP 20292787 A JP20292787 A JP 20292787A JP S6445167 A JPS6445167 A JP S6445167A
- Authority
- JP
- Japan
- Prior art keywords
- value
- base
- inga1
- emitter
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To enable a high speed transistor of high current gain to be manufactured by a method wherein an emitter, a base and a collector are respectively composed of InGa1-x1Al1As, InGa1-x2Alx2As and InGaAs while the value of inner electric field is specified. CONSTITUTION:An emitter, a base and a collector are respectively composed of InGa1-x1Alx1As, InGa1-x2Alx2As and InGaAs. At this time, the value X1 is set up to exceed the value X2 while the value X2 is set up to decrease from the junction with the emitter to the junction with the collector so that the value in inner electric field formed on the base by obliquely composing the base may not exceed 50KV/cm. Thus, a high speed transistor in high current gain can be manufactured by limiting the formed inner electric field to the value not exceeding 50KV/cm by making an oblique gap in the base.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20292787A JPS6445167A (en) | 1987-08-13 | 1987-08-13 | Gradient base transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20292787A JPS6445167A (en) | 1987-08-13 | 1987-08-13 | Gradient base transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6445167A true JPS6445167A (en) | 1989-02-17 |
Family
ID=16465461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20292787A Pending JPS6445167A (en) | 1987-08-13 | 1987-08-13 | Gradient base transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6445167A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027294A (en) * | 2005-07-14 | 2007-02-01 | Nippon Telegr & Teleph Corp <Ntt> | Heterojunction bipolar transistor |
-
1987
- 1987-08-13 JP JP20292787A patent/JPS6445167A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027294A (en) * | 2005-07-14 | 2007-02-01 | Nippon Telegr & Teleph Corp <Ntt> | Heterojunction bipolar transistor |
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