JPS6445167A - Gradient base transistor - Google Patents

Gradient base transistor

Info

Publication number
JPS6445167A
JPS6445167A JP20292787A JP20292787A JPS6445167A JP S6445167 A JPS6445167 A JP S6445167A JP 20292787 A JP20292787 A JP 20292787A JP 20292787 A JP20292787 A JP 20292787A JP S6445167 A JPS6445167 A JP S6445167A
Authority
JP
Japan
Prior art keywords
value
base
inga1
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20292787A
Other languages
Japanese (ja)
Inventor
Akio Furukawa
Kunikazu Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20292787A priority Critical patent/JPS6445167A/en
Publication of JPS6445167A publication Critical patent/JPS6445167A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To enable a high speed transistor of high current gain to be manufactured by a method wherein an emitter, a base and a collector are respectively composed of InGa1-x1Al1As, InGa1-x2Alx2As and InGaAs while the value of inner electric field is specified. CONSTITUTION:An emitter, a base and a collector are respectively composed of InGa1-x1Alx1As, InGa1-x2Alx2As and InGaAs. At this time, the value X1 is set up to exceed the value X2 while the value X2 is set up to decrease from the junction with the emitter to the junction with the collector so that the value in inner electric field formed on the base by obliquely composing the base may not exceed 50KV/cm. Thus, a high speed transistor in high current gain can be manufactured by limiting the formed inner electric field to the value not exceeding 50KV/cm by making an oblique gap in the base.
JP20292787A 1987-08-13 1987-08-13 Gradient base transistor Pending JPS6445167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20292787A JPS6445167A (en) 1987-08-13 1987-08-13 Gradient base transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20292787A JPS6445167A (en) 1987-08-13 1987-08-13 Gradient base transistor

Publications (1)

Publication Number Publication Date
JPS6445167A true JPS6445167A (en) 1989-02-17

Family

ID=16465461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20292787A Pending JPS6445167A (en) 1987-08-13 1987-08-13 Gradient base transistor

Country Status (1)

Country Link
JP (1) JPS6445167A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027294A (en) * 2005-07-14 2007-02-01 Nippon Telegr & Teleph Corp <Ntt> Heterojunction bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027294A (en) * 2005-07-14 2007-02-01 Nippon Telegr & Teleph Corp <Ntt> Heterojunction bipolar transistor

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