JPS6445045A - Process of ion implantation - Google Patents
Process of ion implantationInfo
- Publication number
- JPS6445045A JPS6445045A JP62200002A JP20000287A JPS6445045A JP S6445045 A JPS6445045 A JP S6445045A JP 62200002 A JP62200002 A JP 62200002A JP 20000287 A JP20000287 A JP 20000287A JP S6445045 A JPS6445045 A JP S6445045A
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- emitter
- arsenic
- boron
- element alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005468 ion implantation Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 6
- 229910001325 element alloy Inorganic materials 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 229910052759 nickel Inorganic materials 0.000 abstract 3
- 239000010949 copper Substances 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000007774 longterm Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200002A JPS6445045A (en) | 1987-08-12 | 1987-08-12 | Process of ion implantation |
| US07/227,255 US4892752A (en) | 1987-08-12 | 1988-08-02 | Method of ion implantation |
| DE3855897T DE3855897T2 (de) | 1987-08-12 | 1988-08-11 | Verfahren zur Ionenimplantation |
| EP88307442A EP0303486B1 (en) | 1987-08-12 | 1988-08-11 | Method of ion implantation |
| KR1019880010320A KR920005348B1 (ko) | 1987-08-12 | 1988-08-12 | 이온주입방법 |
| US07/371,976 US4946706A (en) | 1987-08-12 | 1989-06-27 | Method of ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200002A JPS6445045A (en) | 1987-08-12 | 1987-08-12 | Process of ion implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6445045A true JPS6445045A (en) | 1989-02-17 |
| JPH0555969B2 JPH0555969B2 (cg-RX-API-DMAC7.html) | 1993-08-18 |
Family
ID=16417162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62200002A Granted JPS6445045A (en) | 1987-08-12 | 1987-08-12 | Process of ion implantation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6445045A (cg-RX-API-DMAC7.html) |
-
1987
- 1987-08-12 JP JP62200002A patent/JPS6445045A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0555969B2 (cg-RX-API-DMAC7.html) | 1993-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |