JPS644470A - Method for detecting endpoint of selective growth of thin metal film - Google Patents
Method for detecting endpoint of selective growth of thin metal filmInfo
- Publication number
- JPS644470A JPS644470A JP15766287A JP15766287A JPS644470A JP S644470 A JPS644470 A JP S644470A JP 15766287 A JP15766287 A JP 15766287A JP 15766287 A JP15766287 A JP 15766287A JP S644470 A JPS644470 A JP S644470A
- Authority
- JP
- Japan
- Prior art keywords
- light
- metal film
- film
- hole
- reflectivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To reduce variance of film thickness at the time of filling a hole by irradiating the inside of the hole wherein a metal film is to be formed, and detecting the endpoint of the selective growth of metals from the variations in the reflected light. CONSTITUTION:Raw gases are introduced into a water-cooled reaction vessel 8 from cylinders 1 and 2 through flow controllers 3 and 4 and a light shielding plate 11. Light is radiated from a water-cooled halogen lamp 7 provided with a reflecting mirror, and passed through an irradiation window 9 to heat a wafer 12. When a metal film is grown in the hole wherein a metal film is to be grown, He-Ne laser light 17 is radiated through two transmission windows 16, and the reflected light is measured by a photosensor 18. When the light 25 hits on a nail head 24, the reflectivity of the light is lowered as compared with the reflectivity before the growth film on the nail head 24 overflows due to the light scattering on the nail head 24. Accordingly, the endpoint of the film growth can be detected by detecting the variations in the reflectivity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15766287A JPS644470A (en) | 1987-06-26 | 1987-06-26 | Method for detecting endpoint of selective growth of thin metal film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15766287A JPS644470A (en) | 1987-06-26 | 1987-06-26 | Method for detecting endpoint of selective growth of thin metal film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS644470A true JPS644470A (en) | 1989-01-09 |
Family
ID=15654635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15766287A Pending JPS644470A (en) | 1987-06-26 | 1987-06-26 | Method for detecting endpoint of selective growth of thin metal film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS644470A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014107638A1 (en) * | 2014-05-30 | 2015-12-03 | Von Ardenne Gmbh | Process chamber arrangement |
-
1987
- 1987-06-26 JP JP15766287A patent/JPS644470A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014107638A1 (en) * | 2014-05-30 | 2015-12-03 | Von Ardenne Gmbh | Process chamber arrangement |
DE102014107638B4 (en) * | 2014-05-30 | 2019-08-29 | VON ARDENNE Asset GmbH & Co. KG | Process chamber arrangement |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4986658B1 (en) | Transient spectroscopic method and apparatus for in-process analysis of molten metal | |
MY114463A (en) | Content measuring apparatus for plant leaf | |
CA2062757A1 (en) | Measuring apparatus and method | |
JPS644470A (en) | Method for detecting endpoint of selective growth of thin metal film | |
AU5410486A (en) | Measurement of optical density via nephelometry | |
NO161702C (en) | PROCEDURE TO FOOLING THE OXIDATION SPEED THE SURFACE OF A METAL MELT, AND DETERMINING THE CONCENTRATIONS OF MELTEST EFFECTS THE OXYDATION SPEED ONE. | |
JPS57124423A (en) | Manufacture of semiconductor device | |
JPS5538068A (en) | Preparation of semiconductor device | |
JPS6441836A (en) | Reflected light measuring apparatus | |
IN170774B (en) | ||
JPS6482610A (en) | Method of treating chamfered part of wafer | |
JPS5249083A (en) | Device for detecting surface defects of one dimensionally continuous o bjects to be examined | |
JPS53123349A (en) | Plasm cutting method and plasma torch | |
JPS53120552A (en) | Evaluation method of plating surface | |
JPS5668921A (en) | Control method for slider inclination of magnetic head | |
JPS5489765A (en) | Object observation method | |
JPS5737652A (en) | Material for selective absorption of solar-heat energy | |
ES436921A1 (en) | Method and apparatus for forming glass on molten metal by using a radiation reflector | |
Nikolaev | Change in the Reflection Coefficient of an Aluminum Surface During High-Power Pulsed Discharge Radiation | |
JPS6429742A (en) | Method for measuring energy absorptivity | |
JPS6465088A (en) | Molecular beam crystal growth apparatus | |
JPS5349870A (en) | Method of sealing bulb | |
JPS5650126A (en) | Glass melting furnace | |
JPS57206042A (en) | Method for checking wiring pattern of wafer | |
Panysheva et al. | Process of coloring multichrome glasses |