JPS644470A - Method for detecting endpoint of selective growth of thin metal film - Google Patents

Method for detecting endpoint of selective growth of thin metal film

Info

Publication number
JPS644470A
JPS644470A JP15766287A JP15766287A JPS644470A JP S644470 A JPS644470 A JP S644470A JP 15766287 A JP15766287 A JP 15766287A JP 15766287 A JP15766287 A JP 15766287A JP S644470 A JPS644470 A JP S644470A
Authority
JP
Japan
Prior art keywords
light
metal film
film
hole
reflectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15766287A
Other languages
Japanese (ja)
Inventor
Eisuke Nishitani
Susumu Tsujiku
Mitsuo Nakatani
Masaaki Maehara
Koichiro Mizukami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15766287A priority Critical patent/JPS644470A/en
Publication of JPS644470A publication Critical patent/JPS644470A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To reduce variance of film thickness at the time of filling a hole by irradiating the inside of the hole wherein a metal film is to be formed, and detecting the endpoint of the selective growth of metals from the variations in the reflected light. CONSTITUTION:Raw gases are introduced into a water-cooled reaction vessel 8 from cylinders 1 and 2 through flow controllers 3 and 4 and a light shielding plate 11. Light is radiated from a water-cooled halogen lamp 7 provided with a reflecting mirror, and passed through an irradiation window 9 to heat a wafer 12. When a metal film is grown in the hole wherein a metal film is to be grown, He-Ne laser light 17 is radiated through two transmission windows 16, and the reflected light is measured by a photosensor 18. When the light 25 hits on a nail head 24, the reflectivity of the light is lowered as compared with the reflectivity before the growth film on the nail head 24 overflows due to the light scattering on the nail head 24. Accordingly, the endpoint of the film growth can be detected by detecting the variations in the reflectivity.
JP15766287A 1987-06-26 1987-06-26 Method for detecting endpoint of selective growth of thin metal film Pending JPS644470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15766287A JPS644470A (en) 1987-06-26 1987-06-26 Method for detecting endpoint of selective growth of thin metal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15766287A JPS644470A (en) 1987-06-26 1987-06-26 Method for detecting endpoint of selective growth of thin metal film

Publications (1)

Publication Number Publication Date
JPS644470A true JPS644470A (en) 1989-01-09

Family

ID=15654635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15766287A Pending JPS644470A (en) 1987-06-26 1987-06-26 Method for detecting endpoint of selective growth of thin metal film

Country Status (1)

Country Link
JP (1) JPS644470A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014107638A1 (en) * 2014-05-30 2015-12-03 Von Ardenne Gmbh Process chamber arrangement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014107638A1 (en) * 2014-05-30 2015-12-03 Von Ardenne Gmbh Process chamber arrangement
DE102014107638B4 (en) * 2014-05-30 2019-08-29 VON ARDENNE Asset GmbH & Co. KG Process chamber arrangement

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