JPS644434A - Method for recovering high-purity gallium - Google Patents
Method for recovering high-purity galliumInfo
- Publication number
- JPS644434A JPS644434A JP15787087A JP15787087A JPS644434A JP S644434 A JPS644434 A JP S644434A JP 15787087 A JP15787087 A JP 15787087A JP 15787087 A JP15787087 A JP 15787087A JP S644434 A JPS644434 A JP S644434A
- Authority
- JP
- Japan
- Prior art keywords
- gallium
- chloride
- gacl2
- gacl3
- chlorination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Manufacture And Refinement Of Metals (AREA)
Abstract
PURPOSE:To easily recover high-purity gallium in a short time, by subjecting gallium-containing scrap to chlorination and distillation separation to prepare crude gallium chloride, reducing the above aqueous solution with metal, and then applying distillation to the above under reduced pressure. CONSTITUTION:Gallium-containing scrap such as gallium-arsenic and gallium- phosphorus, is crushed and charged into a dissolution vessel, where gallium and other element are chlorinated by means of chlorine gas. After or simultaneously with the chlorination, distillation separation is applied, by which AsCl3, PCl3, etc., are removed and crude gallium chloride composed principally of GaCl3 and GaCl2 is obtained. Further, rechlorination treatment is applied to convert GaCl3 into GaCl2 with lower boiling point, which is distilled and rectified into refined gallium chloride. Subsequently, this aqueous solution of refined gallium chloride is reduced by metal (zinc, etc.) and then subjected to vacuum refining at about 200-1,000 deg.C under a pressure of about 0.01-10Torr to undergo impurity removal. By this method, high-purity metallic gallium can be recovered and used as semiconductor material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15787087A JPS644434A (en) | 1987-06-26 | 1987-06-26 | Method for recovering high-purity gallium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15787087A JPS644434A (en) | 1987-06-26 | 1987-06-26 | Method for recovering high-purity gallium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS644434A true JPS644434A (en) | 1989-01-09 |
Family
ID=15659205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15787087A Pending JPS644434A (en) | 1987-06-26 | 1987-06-26 | Method for recovering high-purity gallium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS644434A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000026422A1 (en) * | 1998-10-29 | 2000-05-11 | Dowa Mining Co., Ltd. | High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same |
JP2002246661A (en) * | 2001-02-20 | 2002-08-30 | Toshiba Corp | Processing system of thermoelectric element |
CN111979432A (en) * | 2020-09-03 | 2020-11-24 | 武汉拓材科技有限公司 | Novel process for preparing ultra-high-purity indium by tower plate rectification |
-
1987
- 1987-06-26 JP JP15787087A patent/JPS644434A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000026422A1 (en) * | 1998-10-29 | 2000-05-11 | Dowa Mining Co., Ltd. | High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same |
US6533838B1 (en) | 1998-10-29 | 2003-03-18 | Dowa Mining Co., Ltd. | High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same |
JP2002246661A (en) * | 2001-02-20 | 2002-08-30 | Toshiba Corp | Processing system of thermoelectric element |
CN111979432A (en) * | 2020-09-03 | 2020-11-24 | 武汉拓材科技有限公司 | Novel process for preparing ultra-high-purity indium by tower plate rectification |
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