JPS644434A - Method for recovering high-purity gallium - Google Patents

Method for recovering high-purity gallium

Info

Publication number
JPS644434A
JPS644434A JP15787087A JP15787087A JPS644434A JP S644434 A JPS644434 A JP S644434A JP 15787087 A JP15787087 A JP 15787087A JP 15787087 A JP15787087 A JP 15787087A JP S644434 A JPS644434 A JP S644434A
Authority
JP
Japan
Prior art keywords
gallium
chloride
gacl2
gacl3
chlorination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15787087A
Other languages
Japanese (ja)
Inventor
Yutaka Nishiyama
Etsuji Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP15787087A priority Critical patent/JPS644434A/en
Publication of JPS644434A publication Critical patent/JPS644434A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling

Landscapes

  • Manufacture And Refinement Of Metals (AREA)

Abstract

PURPOSE:To easily recover high-purity gallium in a short time, by subjecting gallium-containing scrap to chlorination and distillation separation to prepare crude gallium chloride, reducing the above aqueous solution with metal, and then applying distillation to the above under reduced pressure. CONSTITUTION:Gallium-containing scrap such as gallium-arsenic and gallium- phosphorus, is crushed and charged into a dissolution vessel, where gallium and other element are chlorinated by means of chlorine gas. After or simultaneously with the chlorination, distillation separation is applied, by which AsCl3, PCl3, etc., are removed and crude gallium chloride composed principally of GaCl3 and GaCl2 is obtained. Further, rechlorination treatment is applied to convert GaCl3 into GaCl2 with lower boiling point, which is distilled and rectified into refined gallium chloride. Subsequently, this aqueous solution of refined gallium chloride is reduced by metal (zinc, etc.) and then subjected to vacuum refining at about 200-1,000 deg.C under a pressure of about 0.01-10Torr to undergo impurity removal. By this method, high-purity metallic gallium can be recovered and used as semiconductor material.
JP15787087A 1987-06-26 1987-06-26 Method for recovering high-purity gallium Pending JPS644434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15787087A JPS644434A (en) 1987-06-26 1987-06-26 Method for recovering high-purity gallium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15787087A JPS644434A (en) 1987-06-26 1987-06-26 Method for recovering high-purity gallium

Publications (1)

Publication Number Publication Date
JPS644434A true JPS644434A (en) 1989-01-09

Family

ID=15659205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15787087A Pending JPS644434A (en) 1987-06-26 1987-06-26 Method for recovering high-purity gallium

Country Status (1)

Country Link
JP (1) JPS644434A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000026422A1 (en) * 1998-10-29 2000-05-11 Dowa Mining Co., Ltd. High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same
JP2002246661A (en) * 2001-02-20 2002-08-30 Toshiba Corp Processing system of thermoelectric element
CN111979432A (en) * 2020-09-03 2020-11-24 武汉拓材科技有限公司 Novel process for preparing ultra-high-purity indium by tower plate rectification

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000026422A1 (en) * 1998-10-29 2000-05-11 Dowa Mining Co., Ltd. High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same
US6533838B1 (en) 1998-10-29 2003-03-18 Dowa Mining Co., Ltd. High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same
JP2002246661A (en) * 2001-02-20 2002-08-30 Toshiba Corp Processing system of thermoelectric element
CN111979432A (en) * 2020-09-03 2020-11-24 武汉拓材科技有限公司 Novel process for preparing ultra-high-purity indium by tower plate rectification

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