JPS6444014A - Manufacture of silicon thin film - Google Patents

Manufacture of silicon thin film

Info

Publication number
JPS6444014A
JPS6444014A JP20146387A JP20146387A JPS6444014A JP S6444014 A JPS6444014 A JP S6444014A JP 20146387 A JP20146387 A JP 20146387A JP 20146387 A JP20146387 A JP 20146387A JP S6444014 A JPS6444014 A JP S6444014A
Authority
JP
Japan
Prior art keywords
thin film
dopant
dopant material
inert gas
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20146387A
Other languages
Japanese (ja)
Inventor
Takashi Shimobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20146387A priority Critical patent/JPS6444014A/en
Publication of JPS6444014A publication Critical patent/JPS6444014A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a silicon thin film having a low resistance with a good uni formity at a high growth rate by employing an organic compound of group III or V element when forming a silicon single crystalline thin film, a polycrystalline thin film or an amorphous thin film by means of a vapor growth method. CONSTITUTION:A wafer 8 is set on a quartz glass boat 7 set in a reaction tube 6, and the wall face of the tube 9 is covered with a heater 4. Pressure regulating He, 10% SiH4 in He, 0.05% PH3 in He of dopant are controlled at flow rates by a mass flow controller 10. In this apparatus, the dopant is changed from the PH3 in the He to (CH3)3P in He, liquid dopant material 1 is mounted together with solvent 3 in a constant temperature oven 2, inert gas, such as He is introduced into the dopant material to supply the dopant material as the state 5 mixed as vapor into inert gas. Thus, a film having a low resistance is formed with good uniformity at a high growth rate.
JP20146387A 1987-08-12 1987-08-12 Manufacture of silicon thin film Pending JPS6444014A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20146387A JPS6444014A (en) 1987-08-12 1987-08-12 Manufacture of silicon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20146387A JPS6444014A (en) 1987-08-12 1987-08-12 Manufacture of silicon thin film

Publications (1)

Publication Number Publication Date
JPS6444014A true JPS6444014A (en) 1989-02-16

Family

ID=16441506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20146387A Pending JPS6444014A (en) 1987-08-12 1987-08-12 Manufacture of silicon thin film

Country Status (1)

Country Link
JP (1) JPS6444014A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011036957A1 (en) * 2009-09-28 2011-03-31 セントラル硝子株式会社 Oligomethylphosphine compound for amorphous semiconductor film and film deposition gas containing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011036957A1 (en) * 2009-09-28 2011-03-31 セントラル硝子株式会社 Oligomethylphosphine compound for amorphous semiconductor film and film deposition gas containing same
JP2011089193A (en) * 2009-09-28 2011-05-06 Central Glass Co Ltd Oligomethylphosphine compound for amorphous semiconductor film and film deposition gas using the same

Similar Documents

Publication Publication Date Title
US6056820A (en) Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide
US5964944A (en) Method of producing silicon carbide single crystal
EP0193419A1 (en) Method and apparatus for low pressure chemical vapor deposition
JPH0344472A (en) Production of plasma thin film
GB2213837A (en) Electronic device manufacture with deposition of material, particularly cadmium mercury telluride
AU598247B2 (en) Process for forming deposited film
US3979235A (en) Depositing doped material on a substrate
JPS5694751A (en) Vapor growth method
JPS6444014A (en) Manufacture of silicon thin film
US3734770A (en) Nitrogen nucleation process for the chemical vapor deposition of polycrystalline silicon from sici4
US3501406A (en) Method for producing rod-shaped silicon monocrystals with homogeneous antimony doping over the entire rod length
JPS6444013A (en) Manufacture of silicon thin film
EP0045600A1 (en) Improved method for producing semiconductor grade silicon
JP3156858B2 (en) Liquid feeder
KR850001945B1 (en) Method for producing semiconductor grade silicon
JPS6441212A (en) Semiconductor crystal growth method
JPS6459808A (en) Growth of semiconductor
JPS5553415A (en) Selective epitaxial growing
JPS5518077A (en) Device for growing film under gas
JPS5493357A (en) Growing method of polycrystal silicon
JPH0687458B2 (en) Vapor phase epitaxial growth method
JP3707079B2 (en) Compound semiconductor thin film growth method
JPS61114519A (en) Vapor growth equipment
JPS62230694A (en) Production of gaas single crystal
JPS6413732A (en) Method of depositing insulating film onto inp substrate