JPS6444014A - Manufacture of silicon thin film - Google Patents
Manufacture of silicon thin filmInfo
- Publication number
- JPS6444014A JPS6444014A JP20146387A JP20146387A JPS6444014A JP S6444014 A JPS6444014 A JP S6444014A JP 20146387 A JP20146387 A JP 20146387A JP 20146387 A JP20146387 A JP 20146387A JP S6444014 A JPS6444014 A JP S6444014A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- dopant
- dopant material
- inert gas
- low resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a silicon thin film having a low resistance with a good uni formity at a high growth rate by employing an organic compound of group III or V element when forming a silicon single crystalline thin film, a polycrystalline thin film or an amorphous thin film by means of a vapor growth method. CONSTITUTION:A wafer 8 is set on a quartz glass boat 7 set in a reaction tube 6, and the wall face of the tube 9 is covered with a heater 4. Pressure regulating He, 10% SiH4 in He, 0.05% PH3 in He of dopant are controlled at flow rates by a mass flow controller 10. In this apparatus, the dopant is changed from the PH3 in the He to (CH3)3P in He, liquid dopant material 1 is mounted together with solvent 3 in a constant temperature oven 2, inert gas, such as He is introduced into the dopant material to supply the dopant material as the state 5 mixed as vapor into inert gas. Thus, a film having a low resistance is formed with good uniformity at a high growth rate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20146387A JPS6444014A (en) | 1987-08-12 | 1987-08-12 | Manufacture of silicon thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20146387A JPS6444014A (en) | 1987-08-12 | 1987-08-12 | Manufacture of silicon thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6444014A true JPS6444014A (en) | 1989-02-16 |
Family
ID=16441506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20146387A Pending JPS6444014A (en) | 1987-08-12 | 1987-08-12 | Manufacture of silicon thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6444014A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011036957A1 (en) * | 2009-09-28 | 2011-03-31 | セントラル硝子株式会社 | Oligomethylphosphine compound for amorphous semiconductor film and film deposition gas containing same |
-
1987
- 1987-08-12 JP JP20146387A patent/JPS6444014A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011036957A1 (en) * | 2009-09-28 | 2011-03-31 | セントラル硝子株式会社 | Oligomethylphosphine compound for amorphous semiconductor film and film deposition gas containing same |
JP2011089193A (en) * | 2009-09-28 | 2011-05-06 | Central Glass Co Ltd | Oligomethylphosphine compound for amorphous semiconductor film and film deposition gas using the same |
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