JPS6443899A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6443899A
JPS6443899A JP62199845A JP19984587A JPS6443899A JP S6443899 A JPS6443899 A JP S6443899A JP 62199845 A JP62199845 A JP 62199845A JP 19984587 A JP19984587 A JP 19984587A JP S6443899 A JPS6443899 A JP S6443899A
Authority
JP
Japan
Prior art keywords
data
memory
mat
write
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62199845A
Other languages
Japanese (ja)
Other versions
JP2615062B2 (en
Inventor
Hiromi Saito
Satoru Udagawa
Shoji Wada
Shinichi Miyatake
Shinji Udo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi ULSI Engineering Corp
Hitachi Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Priority to JP62199845A priority Critical patent/JP2615062B2/en
Publication of JPS6443899A publication Critical patent/JPS6443899A/en
Application granted granted Critical
Publication of JP2615062B2 publication Critical patent/JP2615062B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To easily and surely detect the write failure of a memory without using an external memory tester by using a sense amplifier in a memory array as the latching means of an expected value data. CONSTITUTION:Write data, supplied from an input buffer DIB, is supplied to a selected memory cell and the sense amplifier in the same column in a mat, opposite to the mat in which said memory cell exists, and is latched. Next, when the write of the data is finished, switches MOSQ1-Q4 and separating switches QS1-QS4 are turned off. Then, when the data, read out from two memory cells having been written coincides with the expected value data, held together in the mat of an opposite side, all the output signals of gates G11-G14 come to be a high level, and the output of a NAND gate G2 comes to be a low level. When the data, read out from the memory cell having been written does not coincide with the expected value data in the sense amplifier, the output of the gate G2 turns to the high level. The write failure can be easily detected from this level.
JP62199845A 1987-08-12 1987-08-12 Semiconductor storage device Expired - Lifetime JP2615062B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62199845A JP2615062B2 (en) 1987-08-12 1987-08-12 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62199845A JP2615062B2 (en) 1987-08-12 1987-08-12 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS6443899A true JPS6443899A (en) 1989-02-16
JP2615062B2 JP2615062B2 (en) 1997-05-28

Family

ID=16414606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62199845A Expired - Lifetime JP2615062B2 (en) 1987-08-12 1987-08-12 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JP2615062B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7779315B2 (en) * 2003-12-05 2010-08-17 Samsung Electronics Co., Ltd. Semiconductor memory device having a single input terminal to select a buffer and method of testing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177394A (en) * 1987-01-17 1988-07-21 Mitsubishi Electric Corp Mos storage device
JPS63209096A (en) * 1987-02-25 1988-08-30 Mitsubishi Electric Corp Semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63177394A (en) * 1987-01-17 1988-07-21 Mitsubishi Electric Corp Mos storage device
JPS63209096A (en) * 1987-02-25 1988-08-30 Mitsubishi Electric Corp Semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7779315B2 (en) * 2003-12-05 2010-08-17 Samsung Electronics Co., Ltd. Semiconductor memory device having a single input terminal to select a buffer and method of testing the same

Also Published As

Publication number Publication date
JP2615062B2 (en) 1997-05-28

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