JPS6442885A - Semiconductor laser - Google Patents

Abstract

PURPOSE:To improve a semiconductor laser in property, yield, and property reproductivity by a method wherein a light resonator direction is made to be tilted against a semiconductor substrate face. CONSTITUTION:An etching mask 2 is formed on an n-InP semiconductor substrate 1 with a face (111) orientation, and a crystal face (100) 3 is formed through a chloride series reactive ion beam etching so as to form an angle of 50 deg. with the substrate 1. In this process, the substrate 1 is subjected to etching as it is tilted so as to make a beam direction nearly parallel to the face (100). As mentioned above, a resonating direction of laser rays is made to be tilted against the substrate face, whereby a laser ray 12 can be efficiently extracted in a upward and oblique direction against the substrate 1 and easily and optically coupled with an optical fiber, and the optical input for an optical fiber can be obtained, which is larger than a few mW.