JPS6441315A - Switching device for high frequency field effect transistor - Google Patents

Switching device for high frequency field effect transistor

Info

Publication number
JPS6441315A
JPS6441315A JP19760187A JP19760187A JPS6441315A JP S6441315 A JPS6441315 A JP S6441315A JP 19760187 A JP19760187 A JP 19760187A JP 19760187 A JP19760187 A JP 19760187A JP S6441315 A JPS6441315 A JP S6441315A
Authority
JP
Japan
Prior art keywords
fet
high frequency
drain
drain current
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19760187A
Other languages
Japanese (ja)
Inventor
Fumio Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19760187A priority Critical patent/JPS6441315A/en
Publication of JPS6441315A publication Critical patent/JPS6441315A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the variance of a drain current of a FET for amplifying a high frequency signal by providing a high frequency FET switching circuit and a drain current control circuit using another FET. CONSTITUTION:A FET 6 having the same characteristic as a high frequency signal amplifying FET 4 and a drain current (IDSB) switching FET 5 are provided in a drain current control circuit 2, the drain of the FET 5 is connected to a high level constant voltage (Vcc) input terminal 19 and the source is connected to the drain of the FET6 for drain current (IDS) control. On the other hand, the source of the FET6 is connected to a low level constant voltage (VEE) input terminal 20 via two resistors (Rs) 9, (Rz) 10 connected in series and the gate is connected to a connecting point 22 between the resistors (Rs) 9 and (Rz) 10 and the gate of the high frequency signal amplification FET 4. Then the switch control signal is inputted from a switch control signal input terminal 18 (CONT) and fed to the gates of the FETs 3, 5. Thus, the variance in the drain bias current is reduced.
JP19760187A 1987-08-07 1987-08-07 Switching device for high frequency field effect transistor Pending JPS6441315A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19760187A JPS6441315A (en) 1987-08-07 1987-08-07 Switching device for high frequency field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19760187A JPS6441315A (en) 1987-08-07 1987-08-07 Switching device for high frequency field effect transistor

Publications (1)

Publication Number Publication Date
JPS6441315A true JPS6441315A (en) 1989-02-13

Family

ID=16377190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19760187A Pending JPS6441315A (en) 1987-08-07 1987-08-07 Switching device for high frequency field effect transistor

Country Status (1)

Country Link
JP (1) JPS6441315A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324305A (en) * 2005-05-17 2006-11-30 Oki Electric Ind Co Ltd Analog semiconductor integrated circuit and its adjustment method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324305A (en) * 2005-05-17 2006-11-30 Oki Electric Ind Co Ltd Analog semiconductor integrated circuit and its adjustment method

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