JPS6435954A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPS6435954A JPS6435954A JP19004187A JP19004187A JPS6435954A JP S6435954 A JPS6435954 A JP S6435954A JP 19004187 A JP19004187 A JP 19004187A JP 19004187 A JP19004187 A JP 19004187A JP S6435954 A JPS6435954 A JP S6435954A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- oxide
- insulating film
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enable a high-performance integrated circuit device having a micro MOS transistor which can coexist with other integrated circuits using a higher order reference voltage, by using as the gate insulating film a silicon oxide nitride film made by thermally nitriding at least part of an oxide film. CONSTITUTION:An insulating film made by nitriding at least part of a silicon oxide film is provided as a gate insulating film 3, and a MOSFET having a minimum gate length of 0.6-0.3mum is provided which is operated with a reference voltage of 5V. That is, an oxide nitride film applied with an oxigen anneal is excellent in the stability of transfer conductance (gn) and the dielectric breakdown characteristics as compared with an oxide film, but, on the other hand, the initial gn value before a stress is applied is reduced to 20-30% of the oxide film. However, if the voltage is reduced in an oxide film MOSFET, transfer conductance reduces. Therefore, by using such oxide nitride film, a high reliability can be accomplished in a micro device the gate length of which is 0.6mum or smaller.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19004187A JPS6435954A (en) | 1987-07-31 | 1987-07-31 | Integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19004187A JPS6435954A (en) | 1987-07-31 | 1987-07-31 | Integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6435954A true JPS6435954A (en) | 1989-02-07 |
Family
ID=16251373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19004187A Pending JPS6435954A (en) | 1987-07-31 | 1987-07-31 | Integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6435954A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07221093A (en) * | 1994-01-22 | 1995-08-18 | Lg Semicon Co Ltd | Silicon insulation film formation of semiconductor element |
JP2003017504A (en) * | 2001-07-03 | 2003-01-17 | Denso Corp | Semiconductor device and method for determining thickness of its protective film |
-
1987
- 1987-07-31 JP JP19004187A patent/JPS6435954A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07221093A (en) * | 1994-01-22 | 1995-08-18 | Lg Semicon Co Ltd | Silicon insulation film formation of semiconductor element |
JP2003017504A (en) * | 2001-07-03 | 2003-01-17 | Denso Corp | Semiconductor device and method for determining thickness of its protective film |
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