JPS6435954A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS6435954A
JPS6435954A JP19004187A JP19004187A JPS6435954A JP S6435954 A JPS6435954 A JP S6435954A JP 19004187 A JP19004187 A JP 19004187A JP 19004187 A JP19004187 A JP 19004187A JP S6435954 A JPS6435954 A JP S6435954A
Authority
JP
Japan
Prior art keywords
film
oxide film
oxide
insulating film
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19004187A
Other languages
Japanese (ja)
Inventor
Takahisa Kusaka
Kiichiro Mukai
Ryuichi Izawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19004187A priority Critical patent/JPS6435954A/en
Publication of JPS6435954A publication Critical patent/JPS6435954A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable a high-performance integrated circuit device having a micro MOS transistor which can coexist with other integrated circuits using a higher order reference voltage, by using as the gate insulating film a silicon oxide nitride film made by thermally nitriding at least part of an oxide film. CONSTITUTION:An insulating film made by nitriding at least part of a silicon oxide film is provided as a gate insulating film 3, and a MOSFET having a minimum gate length of 0.6-0.3mum is provided which is operated with a reference voltage of 5V. That is, an oxide nitride film applied with an oxigen anneal is excellent in the stability of transfer conductance (gn) and the dielectric breakdown characteristics as compared with an oxide film, but, on the other hand, the initial gn value before a stress is applied is reduced to 20-30% of the oxide film. However, if the voltage is reduced in an oxide film MOSFET, transfer conductance reduces. Therefore, by using such oxide nitride film, a high reliability can be accomplished in a micro device the gate length of which is 0.6mum or smaller.
JP19004187A 1987-07-31 1987-07-31 Integrated circuit device Pending JPS6435954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19004187A JPS6435954A (en) 1987-07-31 1987-07-31 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19004187A JPS6435954A (en) 1987-07-31 1987-07-31 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6435954A true JPS6435954A (en) 1989-02-07

Family

ID=16251373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19004187A Pending JPS6435954A (en) 1987-07-31 1987-07-31 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6435954A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221093A (en) * 1994-01-22 1995-08-18 Lg Semicon Co Ltd Silicon insulation film formation of semiconductor element
JP2003017504A (en) * 2001-07-03 2003-01-17 Denso Corp Semiconductor device and method for determining thickness of its protective film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221093A (en) * 1994-01-22 1995-08-18 Lg Semicon Co Ltd Silicon insulation film formation of semiconductor element
JP2003017504A (en) * 2001-07-03 2003-01-17 Denso Corp Semiconductor device and method for determining thickness of its protective film

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