JPS6431438A - Plural power supply voltages corresponding gate array device - Google Patents

Plural power supply voltages corresponding gate array device

Info

Publication number
JPS6431438A
JPS6431438A JP18821287A JP18821287A JPS6431438A JP S6431438 A JPS6431438 A JP S6431438A JP 18821287 A JP18821287 A JP 18821287A JP 18821287 A JP18821287 A JP 18821287A JP S6431438 A JPS6431438 A JP S6431438A
Authority
JP
Japan
Prior art keywords
power supply
region
gate array
array device
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18821287A
Other languages
Japanese (ja)
Inventor
Masahiko Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP18821287A priority Critical patent/JPS6431438A/en
Publication of JPS6431438A publication Critical patent/JPS6431438A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits

Abstract

PURPOSE:To obtain a gate array device which withstands a noise by providing wirings for leading a power supply independently from a basic cell and an I/O cell and providing a power supply wiring region at the periphery of the device. CONSTITUTION:An I/O cell region 101 is formed on the outermost periphery of a device, a power supply wiring region 102 is provided around the inside, and a basic cell region 103 and a wiring region 104 are provided inside the region 102. When two circuits of different power supplies are contained in the device, a first circuit 105 and a second circuit 106 have merely different powers, but form the circuits in combination of basic cell and aluminum wirings. When the aluminums are combined by utilizing the region 102 to connect 107 to 111, 108 to 112, 109 to 113, 110 to 114, the powers of the circuits 105, 106 can be isolated to withstand a noise.
JP18821287A 1987-07-28 1987-07-28 Plural power supply voltages corresponding gate array device Pending JPS6431438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18821287A JPS6431438A (en) 1987-07-28 1987-07-28 Plural power supply voltages corresponding gate array device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18821287A JPS6431438A (en) 1987-07-28 1987-07-28 Plural power supply voltages corresponding gate array device

Publications (1)

Publication Number Publication Date
JPS6431438A true JPS6431438A (en) 1989-02-01

Family

ID=16219730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18821287A Pending JPS6431438A (en) 1987-07-28 1987-07-28 Plural power supply voltages corresponding gate array device

Country Status (1)

Country Link
JP (1) JPS6431438A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661429A (en) * 1992-08-05 1994-03-04 Nec Corp Semiconductor driving device
US5387809A (en) * 1991-02-25 1995-02-07 Hitachi, Ltd. Semiconductor integrated circuit device capable of outputting a plurality of interface levels
JP2007272162A (en) * 2005-05-27 2007-10-18 Seiko Epson Corp Electrooptical device and electronic apparatus having same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387809A (en) * 1991-02-25 1995-02-07 Hitachi, Ltd. Semiconductor integrated circuit device capable of outputting a plurality of interface levels
JPH0661429A (en) * 1992-08-05 1994-03-04 Nec Corp Semiconductor driving device
JP2007272162A (en) * 2005-05-27 2007-10-18 Seiko Epson Corp Electrooptical device and electronic apparatus having same

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