JPS6431331A - Field emission type ion source - Google Patents
Field emission type ion sourceInfo
- Publication number
- JPS6431331A JPS6431331A JP62187082A JP18708287A JPS6431331A JP S6431331 A JPS6431331 A JP S6431331A JP 62187082 A JP62187082 A JP 62187082A JP 18708287 A JP18708287 A JP 18708287A JP S6431331 A JPS6431331 A JP S6431331A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- beryllium
- silicon
- element alloy
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 229910001325 element alloy Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052790 beryllium Inorganic materials 0.000 abstract 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001423 beryllium ion Inorganic materials 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- -1 silicon ions Chemical class 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
PURPOSE:To make it possible to emit stably silicon ions and beryllium ions for a long time by specifying composition of a three-element alloy composed of silicon, beryllium and gold. CONSTITUTION:A three-element alloy is liquidized, which is composed of 17-24atom.% of silicon, 7.5-14atom.% of beryllium and the remainder of gold to be carried on surface of a pin-shaped electrode made of tungsten to emit ions in electrical field. When composition of the three-element alloy is specific like this, a radius of curvature of the tip of the pin-shaped electrode remains in a small value even beams are emitted, so electrical field rarely decreases. Accordingly, there is no increase of a pulled-out voltage when constant current ion beams are pulled out for a long time, and silicon ions or beryllium ions are stably emitted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62187082A JP2671983B2 (en) | 1987-07-27 | 1987-07-27 | Field emission type ion source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62187082A JP2671983B2 (en) | 1987-07-27 | 1987-07-27 | Field emission type ion source |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6431331A true JPS6431331A (en) | 1989-02-01 |
JP2671983B2 JP2671983B2 (en) | 1997-11-05 |
Family
ID=16199812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62187082A Expired - Fee Related JP2671983B2 (en) | 1987-07-27 | 1987-07-27 | Field emission type ion source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2671983B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58223699A (en) * | 1982-06-21 | 1983-12-26 | Agency Of Ind Science & Technol | Device for maskless ion implantation |
JPS59189545A (en) * | 1983-04-11 | 1984-10-27 | Agency Of Ind Science & Technol | Manufacture of liquid metal ion source for field emission type ion beam generator |
-
1987
- 1987-07-27 JP JP62187082A patent/JP2671983B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58223699A (en) * | 1982-06-21 | 1983-12-26 | Agency Of Ind Science & Technol | Device for maskless ion implantation |
JPS59189545A (en) * | 1983-04-11 | 1984-10-27 | Agency Of Ind Science & Technol | Manufacture of liquid metal ion source for field emission type ion beam generator |
Also Published As
Publication number | Publication date |
---|---|
JP2671983B2 (en) | 1997-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |