JPS6429801A - Substrate for supporting fresnel zone plate for x-rays - Google Patents
Substrate for supporting fresnel zone plate for x-raysInfo
- Publication number
- JPS6429801A JPS6429801A JP18611387A JP18611387A JPS6429801A JP S6429801 A JPS6429801 A JP S6429801A JP 18611387 A JP18611387 A JP 18611387A JP 18611387 A JP18611387 A JP 18611387A JP S6429801 A JPS6429801 A JP S6429801A
- Authority
- JP
- Japan
- Prior art keywords
- film
- supporting
- zone plate
- nitride
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
PURPOSE:To support a zone plate for X-rays without degrading condensing efficiency and without deteriorating imaging characteristics by using a nitride subjected to film formation by a CVD method as a supporting film of the zone plate. CONSTITUTION:A nitride film 8 of boron nitride, silicon nitride or the like which is the supporting film of the metallic pattern of the zone plate is formed on the front side of a silicon wafer 7 to serve as a supporting base for a substrate. The rear side of the silicon wafer is coated with a protective film 9 except the part of the nitride film 8 on the front side to be used as the supporting film of the zone plate. This wafer is subjected to anisotropic etching from the rear side of the wafer by an aq. potassium hydroxide soln., or aq. sodium hydroxide soln. or aq. soln. of ethylene diamine and pyrocatechol, etc. A 'Pyrex(R)' ring 10 is thereafter stuck to the rear side at need in order to improve the strength of the silicon wafer 7 of the supporting base. The supporting substrate consisting of such supporting film of the metallic pattern which does not degrade the condensing efficiency and does not degrade the imaging characteristics is thereby obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18611387A JPS6429801A (en) | 1987-07-24 | 1987-07-24 | Substrate for supporting fresnel zone plate for x-rays |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18611387A JPS6429801A (en) | 1987-07-24 | 1987-07-24 | Substrate for supporting fresnel zone plate for x-rays |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6429801A true JPS6429801A (en) | 1989-01-31 |
Family
ID=16182588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18611387A Pending JPS6429801A (en) | 1987-07-24 | 1987-07-24 | Substrate for supporting fresnel zone plate for x-rays |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6429801A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04161899A (en) * | 1990-10-26 | 1992-06-05 | Nikon Corp | X-ray diffraction element |
US6593254B2 (en) | 1999-09-29 | 2003-07-15 | Infineon Technologies Ag | Method for clamping a semiconductor device in a manufacturing process |
CN102207569A (en) * | 2011-06-07 | 2011-10-05 | 中国科学院微电子研究所 | Method for manufacturing phase zone plate |
-
1987
- 1987-07-24 JP JP18611387A patent/JPS6429801A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04161899A (en) * | 1990-10-26 | 1992-06-05 | Nikon Corp | X-ray diffraction element |
US6593254B2 (en) | 1999-09-29 | 2003-07-15 | Infineon Technologies Ag | Method for clamping a semiconductor device in a manufacturing process |
CN102207569A (en) * | 2011-06-07 | 2011-10-05 | 中国科学院微电子研究所 | Method for manufacturing phase zone plate |
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