JPS64261A - Formation of thin film by ion implantation and vapor deposition - Google Patents
Formation of thin film by ion implantation and vapor depositionInfo
- Publication number
- JPS64261A JPS64261A JP15595987A JP15595987A JPS64261A JP S64261 A JPS64261 A JP S64261A JP 15595987 A JP15595987 A JP 15595987A JP 15595987 A JP15595987 A JP 15595987A JP S64261 A JPS64261 A JP S64261A
- Authority
- JP
- Japan
- Prior art keywords
- fixture
- substrate
- ion
- thin film
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE: To prevent the heating of a substrate and to improve the quality of a vapor-deposited thin film by intermittently carrying out at least ion implan tation in the title formation of film wherein vacuum deposition and ion implanta tion are simultaneously carried out.
CONSTITUTION: The substrate 7 fixed to a rotatable substrate fixture 2 provided on the outer wall of a vacuum vessel 1 which is evacuated, for example, to about 10-5 Pa is cooled by liquefied nitrogen to about -200°C, and the fixture 2 is simultaneously rotated in the direction as shown by the arrow A. An N ion is intermittently implanted in the substrate 7 for 2sec in every 10sec from a nitrogen ion injector opposed to the fixture 2. In addition, an electron gun 5 provided to an iron atom vaporizer 5 in the vessel 1 is controlled with the detection value of a crystal oscillator-type monitor 6 as the atom information, and an iron atom is vaporized at a vaporization rate of 1W20Å/sec. An im pressed voltage is simultaneously adjusted to 5W40kV to operate the fixture 2, and the current density is controlled to 0.1W10mA/cm2.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-155959A JPH01261A (en) | 1987-06-23 | Ion deposition thin film formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-155959A JPH01261A (en) | 1987-06-23 | Ion deposition thin film formation method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS64261A true JPS64261A (en) | 1989-01-05 |
JPH01261A JPH01261A (en) | 1989-01-05 |
Family
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03277768A (en) * | 1990-03-22 | 1991-12-09 | Sanyo Electric Co Ltd | Formation of thin highly functional film |
JPH04198471A (en) * | 1990-11-28 | 1992-07-17 | Sanyo Electric Co Ltd | Formation of high performance thin film |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03277768A (en) * | 1990-03-22 | 1991-12-09 | Sanyo Electric Co Ltd | Formation of thin highly functional film |
JPH04198471A (en) * | 1990-11-28 | 1992-07-17 | Sanyo Electric Co Ltd | Formation of high performance thin film |
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