JPS64261A - Formation of thin film by ion implantation and vapor deposition - Google Patents

Formation of thin film by ion implantation and vapor deposition

Info

Publication number
JPS64261A
JPS64261A JP15595987A JP15595987A JPS64261A JP S64261 A JPS64261 A JP S64261A JP 15595987 A JP15595987 A JP 15595987A JP 15595987 A JP15595987 A JP 15595987A JP S64261 A JPS64261 A JP S64261A
Authority
JP
Japan
Prior art keywords
fixture
substrate
ion
thin film
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15595987A
Other languages
Japanese (ja)
Other versions
JPH01261A (en
Inventor
Motonobu Kawarada
Kenichi Sasaki
Kazuaki Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62-155959A priority Critical patent/JPH01261A/en
Priority claimed from JP62-155959A external-priority patent/JPH01261A/en
Publication of JPS64261A publication Critical patent/JPS64261A/en
Publication of JPH01261A publication Critical patent/JPH01261A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: To prevent the heating of a substrate and to improve the quality of a vapor-deposited thin film by intermittently carrying out at least ion implan tation in the title formation of film wherein vacuum deposition and ion implanta tion are simultaneously carried out.
CONSTITUTION: The substrate 7 fixed to a rotatable substrate fixture 2 provided on the outer wall of a vacuum vessel 1 which is evacuated, for example, to about 10-5 Pa is cooled by liquefied nitrogen to about -200°C, and the fixture 2 is simultaneously rotated in the direction as shown by the arrow A. An N ion is intermittently implanted in the substrate 7 for 2sec in every 10sec from a nitrogen ion injector opposed to the fixture 2. In addition, an electron gun 5 provided to an iron atom vaporizer 5 in the vessel 1 is controlled with the detection value of a crystal oscillator-type monitor 6 as the atom information, and an iron atom is vaporized at a vaporization rate of 1W20Å/sec. An im pressed voltage is simultaneously adjusted to 5W40kV to operate the fixture 2, and the current density is controlled to 0.1W10mA/cm2.
COPYRIGHT: (C)1989,JPO&Japio
JP62-155959A 1987-06-23 Ion deposition thin film formation method Pending JPH01261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62-155959A JPH01261A (en) 1987-06-23 Ion deposition thin film formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62-155959A JPH01261A (en) 1987-06-23 Ion deposition thin film formation method

Publications (2)

Publication Number Publication Date
JPS64261A true JPS64261A (en) 1989-01-05
JPH01261A JPH01261A (en) 1989-01-05

Family

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03277768A (en) * 1990-03-22 1991-12-09 Sanyo Electric Co Ltd Formation of thin highly functional film
JPH04198471A (en) * 1990-11-28 1992-07-17 Sanyo Electric Co Ltd Formation of high performance thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03277768A (en) * 1990-03-22 1991-12-09 Sanyo Electric Co Ltd Formation of thin highly functional film
JPH04198471A (en) * 1990-11-28 1992-07-17 Sanyo Electric Co Ltd Formation of high performance thin film

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