JPS6421992A - Target supporting apparatus for x-ray laser - Google Patents
Target supporting apparatus for x-ray laserInfo
- Publication number
- JPS6421992A JPS6421992A JP17773587A JP17773587A JPS6421992A JP S6421992 A JPS6421992 A JP S6421992A JP 17773587 A JP17773587 A JP 17773587A JP 17773587 A JP17773587 A JP 17773587A JP S6421992 A JPS6421992 A JP S6421992A
- Authority
- JP
- Japan
- Prior art keywords
- target
- electrode
- electrodes
- supporting apparatus
- fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S4/00—Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S1/00, H01S3/00 or H01S5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
PURPOSE:To provide a supporting apparatus capable of supporting a fiber-type target straightly at a predetermined position over a long distance, by passing the fiber-type target through one of a pair of electrodes while providing the other electrode with a through hole to allow a laser beam to pass through, and further providing a high-voltage power supply for generating electric field between the electrodes. CONSTITUTION:A supporting apparatus for a fiber-type target 1 the tip end of which is a free end is provided by a pair of elec trodes 2, 3 spaced from each other by a predetermined distance. The target 1 is passed through the electrode 2 so that the tip end 1b is positioned at a predetermined distance from the other electrode 3. The electrode 3 is provided with a through hole 5 so that a laser beam emitted by the target 1 is allowed to pass through there. A high-voltage power supply 4 is further provided for generating electric field between the electrodes 2, 3 in order to hold the target 1 straightly. If the tip end of the target 1 is exhausted, the target may be fed into the space between the electrodes through a through hole 2b in the electrode 2 by rotating rollers 6 disposed on the rear side 2a of the electrode 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17773587A JPH0666531B2 (en) | 1987-07-16 | 1987-07-16 | Target support device for X-ray laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17773587A JPH0666531B2 (en) | 1987-07-16 | 1987-07-16 | Target support device for X-ray laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6421992A true JPS6421992A (en) | 1989-01-25 |
JPH0666531B2 JPH0666531B2 (en) | 1994-08-24 |
Family
ID=16036207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17773587A Expired - Lifetime JPH0666531B2 (en) | 1987-07-16 | 1987-07-16 | Target support device for X-ray laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0666531B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5556461A (en) * | 1993-06-18 | 1996-09-17 | Shin-Etsu Handotai Co., Ltd. | Method for producing a silicon single crystal by a float-zone method |
-
1987
- 1987-07-16 JP JP17773587A patent/JPH0666531B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5556461A (en) * | 1993-06-18 | 1996-09-17 | Shin-Etsu Handotai Co., Ltd. | Method for producing a silicon single crystal by a float-zone method |
US5688321A (en) * | 1993-06-18 | 1997-11-18 | Shin-Etsu Handotai Co., Ltd. | Apparatus for producing a silicon single crystal by a float-zone method |
Also Published As
Publication number | Publication date |
---|---|
JPH0666531B2 (en) | 1994-08-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |