JPS6419751A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6419751A
JPS6419751A JP8641188A JP8641188A JPS6419751A JP S6419751 A JPS6419751 A JP S6419751A JP 8641188 A JP8641188 A JP 8641188A JP 8641188 A JP8641188 A JP 8641188A JP S6419751 A JPS6419751 A JP S6419751A
Authority
JP
Japan
Prior art keywords
contact holes
cut down
same
constitution
speed operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8641188A
Other languages
Japanese (ja)
Inventor
Yoji Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP8641188A priority Critical patent/JPS6419751A/en
Publication of JPS6419751A publication Critical patent/JPS6419751A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To reduce the design margin of contact holes and other patterns for high integration and high speed operation of an integrated device by making the contact holes take the same shape. CONSTITUTION:When the contact holes 101 of a source region 105, a drain region 106 and a gate of a MIS transistor of conventional design in 1.5mumX5.5mum is desiged in 1.5mumX1.5mum, the extention of the contact holes is cut down to around 10% of the designed dimension. Consequently, when the same contact hole dimension is set up at the same margin, the design space of MIS type transistor can be cut down to attain the high integration and high speed operation. In such a constitution, even in case of the MIS transistor in wider channel width, only one shape of contact hole can suffice to cut down the man-hours thereof to 1/4 in case the contact holes are digitalized using CAD.
JP8641188A 1987-04-07 1988-04-07 Semiconductor integrated circuit device Pending JPS6419751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8641188A JPS6419751A (en) 1987-04-07 1988-04-07 Semiconductor integrated circuit device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8596987 1987-04-07
JP8641188A JPS6419751A (en) 1987-04-07 1988-04-07 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6419751A true JPS6419751A (en) 1989-01-23

Family

ID=26426979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8641188A Pending JPS6419751A (en) 1987-04-07 1988-04-07 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6419751A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021760A (en) * 2006-07-12 2008-01-31 Hitachi Displays Ltd Thin film transistor and image display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021760A (en) * 2006-07-12 2008-01-31 Hitachi Displays Ltd Thin film transistor and image display device

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