JPS6417501A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6417501A JPS6417501A JP17442287A JP17442287A JPS6417501A JP S6417501 A JPS6417501 A JP S6417501A JP 17442287 A JP17442287 A JP 17442287A JP 17442287 A JP17442287 A JP 17442287A JP S6417501 A JPS6417501 A JP S6417501A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- fets
- gate electrodes
- substrate
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve characteristics and to miniaturize chip size by forming the gate electrodes of FETs at an angle included within 25-65 deg. range from input and output lines which are parallel with each other. CONSTITUTION:An active layer is formed on a semiconductor substrate 1 among gate electrodes 4, drain electrodes 5 and source electrodes 6 to constitute FETs. In said constitution, the angle theta of respective electrodes 4-6 are constituted so as to be set up to 25 deg.<=theta<=65 deg. from the input and output lines 2, 3 which are parallel with each other. Thereby, a phase difference between signals passing the gate electrodes on the center part and on the end parts is removed and the characteristics of the FETs can be improved. Since distributing lines can be formed in the oblique direction of the substrate 1, useless spaces are not generated on the four corner of the substrate and the chip size can be reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17442287A JPS6417501A (en) | 1987-07-13 | 1987-07-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17442287A JPS6417501A (en) | 1987-07-13 | 1987-07-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6417501A true JPS6417501A (en) | 1989-01-20 |
Family
ID=15978271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17442287A Pending JPS6417501A (en) | 1987-07-13 | 1987-07-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6417501A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159294A (en) * | 1990-03-01 | 1992-10-27 | Murata Manufacturing Co., Ltd. | Non-reciprocal circuit element |
| JPH09312534A (en) * | 1996-05-20 | 1997-12-02 | Mitsubishi Electric Corp | Microwave amplifier |
| US6180701B1 (en) | 1998-04-03 | 2001-01-30 | Kawasaki Steel Corporation | Resin composition and resin molding therefrom |
| JP2011166358A (en) * | 2010-02-08 | 2011-08-25 | Mitsubishi Electric Corp | High frequency attenuator |
-
1987
- 1987-07-13 JP JP17442287A patent/JPS6417501A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159294A (en) * | 1990-03-01 | 1992-10-27 | Murata Manufacturing Co., Ltd. | Non-reciprocal circuit element |
| JPH09312534A (en) * | 1996-05-20 | 1997-12-02 | Mitsubishi Electric Corp | Microwave amplifier |
| US6180701B1 (en) | 1998-04-03 | 2001-01-30 | Kawasaki Steel Corporation | Resin composition and resin molding therefrom |
| JP2011166358A (en) * | 2010-02-08 | 2011-08-25 | Mitsubishi Electric Corp | High frequency attenuator |
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