JPS6417351A - Manufacture of secondary electron multiplier - Google Patents

Manufacture of secondary electron multiplier

Info

Publication number
JPS6417351A
JPS6417351A JP17321887A JP17321887A JPS6417351A JP S6417351 A JPS6417351 A JP S6417351A JP 17321887 A JP17321887 A JP 17321887A JP 17321887 A JP17321887 A JP 17321887A JP S6417351 A JPS6417351 A JP S6417351A
Authority
JP
Japan
Prior art keywords
secondary electron
cylinder
resistance value
metallic oxide
electron multiplier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17321887A
Other languages
Japanese (ja)
Inventor
Akiyoshi Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17321887A priority Critical patent/JPS6417351A/en
Publication of JPS6417351A publication Critical patent/JPS6417351A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To make it possible to realize highly efficiency secondary electron multiplication effect by successively increasing, from an input terminal side to an output terminal side, a resistance value of an oxide layer of aluminum or titanium with a high emission ratio of secondary electrons deposited on the inner surface of a cylinder. CONSTITUTION:The secondary electron multiplier in the caption is formed through those processes in which aluminum or titanium metal 13 becoming a metallic oxide with a high secondary electron emission ratio is decomposed and deposited on the inner surface of an insulating cylinder 12 by CVD method, a hollow part of the cylinder 12 is filled with liquid with a boiling point less than a thermal oxidation treatment temperature after sealing one opening of the cylinder 12, a secondary electron emitting layer of a metallic oxide with successive resistance value distribution is formed by thermally oxidating a coating metal 13 in fluid of oxidizing gas and removing a sealing body. Accordingly, a high efficient secondary electron multiplier can be obtained, because it is possible to successively change, from an incident side to an emitting side, the resistance value of the secondary electron emitting layer made of metallic oxide 13 on the inner surface of the cylinder 12.
JP17321887A 1987-07-10 1987-07-10 Manufacture of secondary electron multiplier Pending JPS6417351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17321887A JPS6417351A (en) 1987-07-10 1987-07-10 Manufacture of secondary electron multiplier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17321887A JPS6417351A (en) 1987-07-10 1987-07-10 Manufacture of secondary electron multiplier

Publications (1)

Publication Number Publication Date
JPS6417351A true JPS6417351A (en) 1989-01-20

Family

ID=15956319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17321887A Pending JPS6417351A (en) 1987-07-10 1987-07-10 Manufacture of secondary electron multiplier

Country Status (1)

Country Link
JP (1) JPS6417351A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013172417A1 (en) * 2012-05-18 2013-11-21 浜松ホトニクス株式会社 Microchannel plate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013172417A1 (en) * 2012-05-18 2013-11-21 浜松ホトニクス株式会社 Microchannel plate
US9117640B2 (en) 2012-05-18 2015-08-25 Hamamatsu Photonics K.K. Microchannel plate having a main body, image intensifier, ion detector, and inspection device
JPWO2013172417A1 (en) * 2012-05-18 2016-01-12 浜松ホトニクス株式会社 Micro channel plate

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