JPS6417296A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS6417296A JPS6417296A JP17224487A JP17224487A JPS6417296A JP S6417296 A JPS6417296 A JP S6417296A JP 17224487 A JP17224487 A JP 17224487A JP 17224487 A JP17224487 A JP 17224487A JP S6417296 A JPS6417296 A JP S6417296A
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- mos transistor
- transistor
- cell block
- bit check
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Read Only Memory (AREA)
Abstract
PURPOSE:To increase a current flowing to a memory cell block, and to contrive to improve a read-out speed by providing a bit check use transistor for storing an assignment state of the data of the memory cell block, between a selection use transistor and a memory cell use transistor. CONSTITUTION:Between a selection use MOS transistor S1 and a memory cell use MOS transistor M1, a bit check use MOS transistor CT which is brought to a conduction control by a signal C is provided. This bit check use MOS transistor CT stores which of the stored data having more '1' or '0' in one memory cell block 11 has been assigned to a depression type MOS transistor. Accordingly, half or more of the memory cell use MOS transistors for constituting one memory cell block can be formed to the depression type. In such a way, a current flowing to the memory cell block can be increased and set, and also, for a load MOS transistor L1, as well, that of a large current driving capacity can be used, therefore, read-out can be executed at a high speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17224487A JPH0738277B2 (en) | 1987-07-10 | 1987-07-10 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17224487A JPH0738277B2 (en) | 1987-07-10 | 1987-07-10 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6417296A true JPS6417296A (en) | 1989-01-20 |
JPH0738277B2 JPH0738277B2 (en) | 1995-04-26 |
Family
ID=15938289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17224487A Expired - Lifetime JPH0738277B2 (en) | 1987-07-10 | 1987-07-10 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0738277B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0640982A2 (en) * | 1993-08-27 | 1995-03-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
US6091639A (en) * | 1993-08-27 | 2000-07-18 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
-
1987
- 1987-07-10 JP JP17224487A patent/JPH0738277B2/en not_active Expired - Lifetime
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0640982A2 (en) * | 1993-08-27 | 1995-03-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
US5579260A (en) * | 1993-08-27 | 1996-11-26 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
EP0640982A3 (en) * | 1993-08-27 | 1997-10-15 | Toshiba Kk | Non-volatile semiconductor memory device and data programming method. |
US5808939A (en) * | 1993-08-27 | 1998-09-15 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
US5923588A (en) * | 1993-08-27 | 1999-07-13 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device with a plurality of programming voltage levels |
US6091639A (en) * | 1993-08-27 | 2000-07-18 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
US6169690B1 (en) | 1993-08-27 | 2001-01-02 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
US6304489B1 (en) | 1993-08-27 | 2001-10-16 | Hiroshi Iwahashi | Non-volatile semiconductor memory device and data programming method |
US6344999B1 (en) | 1993-08-27 | 2002-02-05 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
US6353557B2 (en) | 1993-08-27 | 2002-03-05 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
US6738293B1 (en) | 1993-08-27 | 2004-05-18 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
US6785166B2 (en) | 1993-08-27 | 2004-08-31 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
US7064979B2 (en) | 1993-08-27 | 2006-06-20 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and data programming method |
Also Published As
Publication number | Publication date |
---|---|
JPH0738277B2 (en) | 1995-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080426 Year of fee payment: 13 |