JPS6410692A - Bistable semiconductor laser - Google Patents
Bistable semiconductor laserInfo
- Publication number
- JPS6410692A JPS6410692A JP16633887A JP16633887A JPS6410692A JP S6410692 A JPS6410692 A JP S6410692A JP 16633887 A JP16633887 A JP 16633887A JP 16633887 A JP16633887 A JP 16633887A JP S6410692 A JPS6410692 A JP S6410692A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- active
- light
- beta
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/026—Optical bistable devices based on laser effects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To provide a stably operating bistable semiconductor laser capable of performing bistable operation in a larger current region and having improved reproducibility, based on a principle of bistable operation, by forming a light absorbing region instead of providing an absorbing region by difference in carrier injection. CONSTITUTION:A bistable semiconductor laser of the invention has a first blocking layer 14 formed along the length of a resonator of a linear active region 21 and adjacent to a second clad layer 13. The first blocking layer 14 serves as a light absorbing layer to light generated by the laser. The linear active region 21 has a band gap smaller than that of the active layer outside thereof. Accordingly, even if the linear active region 21 is placed apart from the reflecting surface, it can transmit laser light without absorbing it. When a ratio of a length of a non-excited region of the active layer under the light absorbing layer region to a length of the active region is h:(1-h) and a loss alpha of light received by the non-excited region of the active layer is a standardized loss beta=halpha/tau when tau is cavity loss, a ratio ga/gb of a diffferential gain factor of the active region to that of the non-excited region of the active layer and a ratio taua/taub of natural carrier lives of these regions have a relation represented by ga.taua/gb.taub<(-beta)/(1-beta).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16633887A JPS6410692A (en) | 1987-07-02 | 1987-07-02 | Bistable semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16633887A JPS6410692A (en) | 1987-07-02 | 1987-07-02 | Bistable semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6410692A true JPS6410692A (en) | 1989-01-13 |
Family
ID=15829515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16633887A Pending JPS6410692A (en) | 1987-07-02 | 1987-07-02 | Bistable semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6410692A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6244742B1 (en) | 1998-04-08 | 2001-06-12 | Citizen Watch Co., Ltd. | Self-winding electric power generation watch with additional function |
| JP2010245242A (en) * | 2009-04-06 | 2010-10-28 | Mitsubishi Electric Corp | Semiconductor laser device, method of manufacturing semiconductor laser device and method of diffusing impurity |
-
1987
- 1987-07-02 JP JP16633887A patent/JPS6410692A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6244742B1 (en) | 1998-04-08 | 2001-06-12 | Citizen Watch Co., Ltd. | Self-winding electric power generation watch with additional function |
| JP2010245242A (en) * | 2009-04-06 | 2010-10-28 | Mitsubishi Electric Corp | Semiconductor laser device, method of manufacturing semiconductor laser device and method of diffusing impurity |
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