JPS6410095B2 - - Google Patents

Info

Publication number
JPS6410095B2
JPS6410095B2 JP18251582A JP18251582A JPS6410095B2 JP S6410095 B2 JPS6410095 B2 JP S6410095B2 JP 18251582 A JP18251582 A JP 18251582A JP 18251582 A JP18251582 A JP 18251582A JP S6410095 B2 JPS6410095 B2 JP S6410095B2
Authority
JP
Japan
Prior art keywords
terminal
mos transistor
potential
signal input
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18251582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5972153A (ja
Inventor
Mitsuo Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57182515A priority Critical patent/JPS5972153A/ja
Publication of JPS5972153A publication Critical patent/JPS5972153A/ja
Publication of JPS6410095B2 publication Critical patent/JPS6410095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
JP57182515A 1982-10-18 1982-10-18 半導体集積回路装置 Granted JPS5972153A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57182515A JPS5972153A (ja) 1982-10-18 1982-10-18 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57182515A JPS5972153A (ja) 1982-10-18 1982-10-18 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5972153A JPS5972153A (ja) 1984-04-24
JPS6410095B2 true JPS6410095B2 (enExample) 1989-02-21

Family

ID=16119643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57182515A Granted JPS5972153A (ja) 1982-10-18 1982-10-18 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5972153A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59157900A (ja) * 1983-02-25 1984-09-07 Nec Corp 冗長ビツト使用の検出回路を有するメモリ装置
JPS6166295A (ja) * 1984-09-10 1986-04-05 Nec Corp 半導体メモリ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480199A (en) * 1982-03-19 1984-10-30 Fairchild Camera & Instrument Corp. Identification of repaired integrated circuits

Also Published As

Publication number Publication date
JPS5972153A (ja) 1984-04-24

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