JPS5972153A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS5972153A
JPS5972153A JP57182515A JP18251582A JPS5972153A JP S5972153 A JPS5972153 A JP S5972153A JP 57182515 A JP57182515 A JP 57182515A JP 18251582 A JP18251582 A JP 18251582A JP S5972153 A JPS5972153 A JP S5972153A
Authority
JP
Japan
Prior art keywords
terminal
transistor
circuit device
signal input
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57182515A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410095B2 (enExample
Inventor
Mitsuo Isobe
磯部　満郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57182515A priority Critical patent/JPS5972153A/ja
Publication of JPS5972153A publication Critical patent/JPS5972153A/ja
Publication of JPS6410095B2 publication Critical patent/JPS6410095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
JP57182515A 1982-10-18 1982-10-18 半導体集積回路装置 Granted JPS5972153A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57182515A JPS5972153A (ja) 1982-10-18 1982-10-18 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57182515A JPS5972153A (ja) 1982-10-18 1982-10-18 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5972153A true JPS5972153A (ja) 1984-04-24
JPS6410095B2 JPS6410095B2 (enExample) 1989-02-21

Family

ID=16119643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57182515A Granted JPS5972153A (ja) 1982-10-18 1982-10-18 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5972153A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59157900A (ja) * 1983-02-25 1984-09-07 Nec Corp 冗長ビツト使用の検出回路を有するメモリ装置
JPS6166295A (ja) * 1984-09-10 1986-04-05 Nec Corp 半導体メモリ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170034A (ja) * 1982-03-19 1983-10-06 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 修復した集積回路の識別

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170034A (ja) * 1982-03-19 1983-10-06 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 修復した集積回路の識別

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59157900A (ja) * 1983-02-25 1984-09-07 Nec Corp 冗長ビツト使用の検出回路を有するメモリ装置
JPS6166295A (ja) * 1984-09-10 1986-04-05 Nec Corp 半導体メモリ

Also Published As

Publication number Publication date
JPS6410095B2 (enExample) 1989-02-21

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