JPS6399529A - Removing method of organic film - Google Patents
Removing method of organic filmInfo
- Publication number
- JPS6399529A JPS6399529A JP24415086A JP24415086A JPS6399529A JP S6399529 A JPS6399529 A JP S6399529A JP 24415086 A JP24415086 A JP 24415086A JP 24415086 A JP24415086 A JP 24415086A JP S6399529 A JPS6399529 A JP S6399529A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ozone
- organic film
- gas
- treating chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims abstract description 52
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 239000003960 organic solvent Substances 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- 239000011368 organic material Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 26
- 239000000126 substance Substances 0.000 description 11
- 239000005416 organic matter Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は有機物被膜の乾燥状態での除去方法及び装置に
関するもので、特に半導体装置の製造に用いるレジスト
膜の除去方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method and apparatus for removing an organic film in a dry state, and particularly to a method for removing a resist film used in the manufacture of semiconductor devices.
（従来技術）
半導体装置を製造する場合には、写真処理技術あるいは
、Ｘ線照射、電子線照射等で回路パターンが描かれたレ
ジスト膜を形成したシリコン等の基板にエツチング等の
処理を施した後に該レジスト膜を除去することが必要で
ある。(Prior art) When manufacturing semiconductor devices, a process such as etching is performed on a silicon substrate on which a resist film with a circuit pattern is formed using photo processing techniques, X-ray irradiation, electron beam irradiation, etc. It is necessary to remove the resist film afterwards.
レジスト膜は酸化力のある液体中へ浸漬する湿式処理に
より除去したり、酸素プラズマ、紫外線、オゾンなどの
乾式処理によって除去している。The resist film is removed by a wet process by immersing it in an oxidizing liquid, or by a dry process using oxygen plasma, ultraviolet light, ozone, or the like.
溶液による湿式処理は、廃液処理に手数がかかり、また
液体中に含まれる不純物が半導体装置に悪影響を及ぼす
という問題点から乾式処理への要望が高まっている。There is an increasing demand for dry processing due to the problem that wet processing using a solution requires time and effort to process waste liquid, and impurities contained in the liquid have an adverse effect on semiconductor devices.
乾式処理の中心であった酸素プラズマによる方法は、プ
ラズマによって半導体装置に損傷が生じることかあり、
オゾンや紫外線による除去方法が注目されている。The method using oxygen plasma, which has been the mainstay of dry processing, has the potential to cause damage to semiconductor devices due to the plasma.
Removal methods using ozone and ultraviolet rays are attracting attention.
（発明が解決しようとする問題点）
オゾンが供給されているハウジング内で半導体基板を加
熱しつつ有機物被膜を除去することは、例えば、特開昭
５２−２０７６６号として知られている。この様な方法
により、有機物被膜の除去を続けていると除去装置のオ
ゾン噴射ノズルを初めとする処理室内に各種の有機化合
物の付着が認められる。付着物は、レジスト等の溶剤や
低分子化合物必るいは、分解によって生じる物質などで
ある。この様な付着物は、装置ひいては処理すべき半導
体基板の汚染を引き起こすという問題点があった。(Problems to be Solved by the Invention) A technique for removing an organic film while heating a semiconductor substrate in a housing supplied with ozone is known, for example, as disclosed in Japanese Patent Application Laid-Open No. 52-20766. When the organic film is continuously removed by such a method, various organic compounds are found to be attached to the processing chamber including the ozone injection nozzle of the removal device. The deposits include solvents such as resist, low-molecular compounds, or substances generated by decomposition. There is a problem in that such deposits cause contamination of the apparatus and also of the semiconductor substrate to be processed.
又、オゾンの発生装置はオゾンの発生を安定化する為に
連続運転をすることが不可欠である。オゾン発生装置の
連続運転に対応し、オゾンの供給を連続化するために、
処理すべき基板をコンベアシステム等により連続的に導
入し、窒素ガスでシールすることを行うことが提案され
ている。ところが、１２．５ｃｍないし２０ｃｍの直径
の円形の基板上の有機物被膜をむらなく短時間に除去す
るためには、処理すべき基板を回転することが有効であ
るが、コンベアシステムに基板の回転機構を設けること
は、極めて複雑な＠横になる。Furthermore, it is essential that the ozone generator be operated continuously in order to stabilize the generation of ozone. In order to support the continuous operation of ozone generators and to ensure a continuous supply of ozone,
It has been proposed to continuously introduce substrates to be processed using a conveyor system or the like and seal them with nitrogen gas. However, in order to uniformly and quickly remove an organic film on a circular substrate with a diameter of 12.5 cm to 20 cm, it is effective to rotate the substrate to be processed. It is extremely complicated to set up
従って、基板の回転機構を設ける場合には、バッチ式の
処理を採用することが好ましい。バッチ式の装置への基
板の出し入れもシールガス等の手段によりオゾンの噴射
を停止しないことも可能であるが、オゾンが無駄となり
、極めて不経済である。Therefore, when providing a substrate rotation mechanism, it is preferable to employ batch type processing. Although it is possible to take substrates into and out of a batch-type device without stopping the injection of ozone using means such as a seal gas, the ozone is wasted and this is extremely uneconomical.
（問題点を解決するための手段）
そこで、本発明では処理室内壁への有機物の付着を減少
させるために、オゾンによる処理を行う前に、大量の気
体を流しつつ基板を加熱すること或いは外部から気体を
供給することなく気体を吸引除去しつつ加熱をおこなう
ことにより、基板の予熱と基板上の有機物被膜から発生
する有機溶剤や低分子物質を速やかに外部へ排除し、有
機物被膜の除去のための処理室内壁面への有機物の付着
を減少させるとともに、有機物被膜の除去のための処理
室の運転を連続化することにより、オゾンの発生装置の
連続運転を可能としたものである。(Means for Solving the Problems) Therefore, in the present invention, in order to reduce the adhesion of organic substances to the walls of the processing chamber, the substrate is heated while flowing a large amount of gas, or the substrate is heated outside before being treated with ozone. By heating while suctioning and removing gas without supplying gas from the substrate, organic solvents and low-molecular substances generated from the organic film on the substrate are quickly expelled to the outside while the substrate is preheated, and the organic film can be removed. The ozone generator can be operated continuously by reducing the adhesion of organic substances to the inner wall surface of the processing chamber and by continuous operation of the processing chamber for removing the organic film.
前記した基板の予熱及び有機溶剤や低分子物質の事前処
理は、有機物被膜の除去のための処理室とは別室におい
て行なっても良いし、処理室を複数個設けて、気体の供
給及び排出管を切り替えることにより処理室を事前処理
室と有機物被膜の除去至とに切り替えることにより、基
板の予熱と有機溶剤や低分子物質の事前処理とオゾンに
よる処理を同時並行して行うこともできる。The preheating of the substrate and the pretreatment of organic solvents and low-molecular substances as described above may be performed in a separate room from the processing chamber for removing the organic film, or multiple processing chambers may be provided, and gas supply and exhaust pipes may be provided. By switching the processing chamber between the pretreatment chamber and the removal of the organic film, preheating of the substrate, pretreatment with an organic solvent or low molecular weight substance, and treatment with ozone can be performed simultaneously.
このようにすることにより、有機物被膜を除去すべき基
板の予熱を行いながら、有機物被膜に含まれている有機
溶剤や、低分子化合物をあらかじめ除去することが可能
となり、オゾン噴射ノズルをはじめとする処理室内に、
各種の有機物が付着するのを極めて効果的に防止するこ
とができるので、運転を停止して付着物を除去するとい
う時間的なロスを大幅に減少させることが可能となる。By doing this, it is possible to preheat the substrate from which the organic film is to be removed and remove organic solvents and low-molecular compounds contained in the organic film, making it possible to remove the organic solvent and low-molecular compounds contained in the organic film. Inside the processing room,
Since the adhesion of various organic substances can be extremely effectively prevented, it is possible to significantly reduce the time loss required to stop the operation and remove the adhering substances.
基板の予熱及び有機物被膜の事前処理を別室で−〇 −
行なった場合には、有機物被膜の除去のための処理室内
壁面への各種の有機物の付着を極めて小さくすることが
可能でおるが、装置の面積が大きくなったり、基板の移
動装置が必要となり、基板の移動時に予熱した基板の温
度の低下などが生じるという不利な面を有している。一
方、有機物被膜の除去のための処理室を複数個設け、処
理室を切り替えて事前処理を行う方法は、処理室内壁面
への有機物の付着の点では前者に劣るが、装置が簡単で
、装置の大きさも小さくなるという有利な面を有してい
る。If the preheating of the substrate and the pretreatment of the organic film are carried out in a separate room, it is possible to minimize the adhesion of various organic substances to the walls of the processing chamber for removal of the organic film, but the equipment This method has the disadvantages that the area becomes large, a device for moving the substrate is required, and the temperature of the preheated substrate decreases when the substrate is moved. On the other hand, a method in which multiple processing chambers are provided for removing organic matter films and pre-treatment is performed by switching between the processing chambers is inferior to the former method in terms of the adhesion of organic matter to the walls of the processing chambers, but the equipment is simple and the It has the advantage of being smaller in size.
基板の事前処理においては、気体を大量に流す方法と吸
引除去方法のいずれも採用することができるが、気体を
大量に流すと基板の温度が低下し予熱に長時間を要する
ことになるので、気体を大量に流す方法よりも吸引除去
する方法が好ましい。In pre-processing the substrate, both a method of flowing a large amount of gas and a method of suction removal can be adopted, but if a large amount of gas is flowed, the temperature of the substrate will drop and preheating will take a long time. A method of suction removal is preferable to a method of flowing a large amount of gas.
また、基板を予熱しながら気体を吸引除去する事前処理
と同時にオゾンによる処理を並行して行うことことによ
り、オゾン発生装置を停止することなく連続した運転が
可能となり、オゾンの発生装置にとっても好ましく生産
性も向上する。In addition, by performing the ozone treatment in parallel with the preliminary treatment of suctioning and removing gas while preheating the substrate, continuous operation is possible without stopping the ozone generator, which is also favorable for the ozone generator. Productivity will also improve.
以下添付の図面に基づいて、複数の処理室を設けて処理
室を切り替える方法に関して本発明を説明する。第１図
は本発明の方法を実施するための有機物被膜の処理装置
である。この装置は、２個の処理室１及び２を有してい
る。それぞれの処理室は、同様の構造をしているので一
方についてその構造を説明する。The present invention will be described below with reference to the accompanying drawings regarding a method of providing a plurality of processing chambers and switching between the processing chambers. FIG. 1 shows an organic film processing apparatus for carrying out the method of the present invention. This device has two processing chambers 1 and 2. Since each processing chamber has a similar structure, the structure of one will be explained.
処理室１内には、処理すべき半導体基板３を載置する基
板支持装置４があり、基板支持装置には回転機構が設け
られている。基板支持装置の下部には加熱装置５が設Ｃ
プられ、処理装置内には高濃度のオゾン供給管６が必り
、該供給管は冷却管７で包囲されている。オゾン供給管
は、半導体基板上へオゾンを噴射する複数のノズル８と
連結されており、冷却管により冷却されている。Inside the processing chamber 1 is a substrate support device 4 on which a semiconductor substrate 3 to be processed is placed, and the substrate support device is provided with a rotation mechanism. A heating device 5 is installed at the bottom of the substrate support device C.
A high-concentration ozone supply pipe 6 is required inside the processing apparatus, and the supply pipe is surrounded by a cooling pipe 7. The ozone supply pipe is connected to a plurality of nozzles 8 that inject ozone onto the semiconductor substrate, and is cooled by a cooling pipe.
処理室には、上部に気体吸引管９と気体排出管１０が設
（プられている。気体吸引管と気体排出管の位置および
個数は適宜に選ぶことができるが、処理室内での気体の
流れや処理室内壁および基板の汚染を考慮すると、気体
吸引管は、処理室の上部に、また気体排出管は処理室の
下部に設けるのが好ましい。A gas suction pipe 9 and a gas discharge pipe 10 are installed in the upper part of the processing chamber.The position and number of the gas suction pipe and gas discharge pipe can be selected as appropriate, but the Considering the flow and contamination of the processing chamber inner wall and substrate, it is preferable to provide the gas suction pipe in the upper part of the processing chamber and the gas exhaust pipe in the lower part of the processing chamber.
処理室、オゾン供給管、ノズル等をはじめとする構成材
料は、ステンレスのようなオゾンに耐蝕性のある材料で
あれば、各種の材料を使用することができ、ノズルの本
数も処理すべき基板の大きさに応じて適宜に設定するこ
とができる。 オゾンはオゾン発生装置１１において発
生させ、切換装置１２でいずれかの処理室に供給する。Various materials can be used for the processing chamber, ozone supply pipes, nozzles, etc., as long as they are resistant to ozone corrosion, such as stainless steel, and the number of nozzles also depends on the substrate to be processed. It can be set appropriately depending on the size of. Ozone is generated in an ozone generator 11 and supplied to one of the processing chambers by a switching device 12.
気体吸引管には、切替装置１３を介して気体吸引装置１
４が接続されており、また気体排出管は、切替装置１５
を介してオゾン分解装置１６が接続されている。A gas suction device 1 is connected to the gas suction pipe via a switching device 13.
4 is connected, and the gas discharge pipe is connected to the switching device 15.
An ozone decomposition device 16 is connected via.
有機物被膜を除去する基板がいずれかの処理室に搬入さ
れ、加熱装置によりオゾン処理に必要な温度まで予熱し
ながら、処理室内の気体を吸引除去する。この際に、少
量のオゾンを噴射しても良い。事前処理を２０ないし４
０秒間行った後に、気体吸引装置、オゾン発生装置およ
びオゾン分解Ｑ−
装置を切替装置により切換えて、予熱および有機溶剤や
低分子物質の事前処理の終了した基板に高濃度オゾンを
噴射して、有機物被膜の除去を行う。A substrate from which an organic film is to be removed is carried into one of the processing chambers, and while being preheated to a temperature necessary for ozone treatment using a heating device, the gas in the processing chamber is removed by suction. At this time, a small amount of ozone may be injected. 20 to 4 pre-processing
After 0 seconds, the gas suction device, ozone generator, and ozone decomposition Q- device are switched by the switching device, and high concentration ozone is injected onto the substrate that has been preheated and pretreated with organic solvents and low-molecular substances. Remove organic film.
一方の処理室内で有機物被膜の除去を行っている間に、
他方の処理装置においては、処理すべき基板の搬入、搬
出、予熱或いは処理室内の気体の吸引除去を行うのが好
ましく、このようにすることによって、オゾン発生装置
の連続運転が可能となるとともに生産性が向上する。ま
た、各工程の切り替えはマイクロコンピュータなどを使
用した任意の制御装置により自動化することが可能であ
ることはいうまでもない。While removing the organic film in one processing chamber,
In the other processing equipment, it is preferable to carry in and out the substrate to be processed, preheat it, or suction and remove the gas in the processing chamber.By doing this, it is possible to continuously operate the ozone generator, and the production speed is increased. Improves sex. Further, it goes without saying that switching between each process can be automated by any control device using a microcomputer or the like.
（実施例） 以下実施例に基づき本発明を説明する。(Example) The present invention will be explained below based on Examples.
東京応化工業（株）製ポジ型ボトレジスト０ＦＰＲ−８
００を１．５ａｍ塗布シ現像シタ基板ヲ、１分間に２．
５回転する試料支持装置上に載置し、電気ヒータにより
基板を３００’Ｃ迄加熱しつつ処理室内の気体を３０秒
間吸引除去した。Positive type bottom resist 0FPR-8 manufactured by Tokyo Ohka Kogyo Co., Ltd.
Apply 0.00 at 1.5 am and develop on the substrate at 2.0 am per minute.
The substrate was placed on a sample support device that rotates five times, and while the substrate was heated to 300'C by an electric heater, the gas in the processing chamber was removed by suction for 30 seconds.
続いて、切替装置を作動させ、吸引除去を停止して、内
径０．７８のノズルから基板上に約６０゜ｏ ｏ ｏ
ｐｐｍのオゾンを含む酸素を１分間に６リツトルの割合
で噴射した。この処理を１分３０秒行い、内部のオゾン
を窒素ガスでパージの後に処理室から基板を取り出した
。Next, the switching device is activated, suction removal is stopped, and about 60° o o o is applied onto the substrate from the nozzle with an inner diameter of 0.78.
Oxygen containing ppm of ozone was injected at a rate of 6 liters per minute. This process was carried out for 1 minute and 30 seconds, and after purging the ozone inside with nitrogen gas, the substrate was taken out from the process chamber.
オゾンによる処理を行っている間に他の処理室では、予
熱と事前処理を行った。While the ozone treatment was being performed, preheating and pretreatment were performed in other treatment chambers.
事前処理では、基板の有機物被膜から蒸気が発生するの
が認められ、吸引装置の前に取り付けたトラップには発
生した蒸気を捕捉することができ、処理室内壁の汚染を
減少することができた。During pre-treatment, it was observed that steam was generated from the organic film on the substrate, and the trap installed in front of the suction device was able to capture the generated steam, reducing contamination on the walls of the processing chamber. .
（発明の効果）
有機物被膜を形成した基板から該被膜を除去する方法に
おいて有機物被膜を形成した基板を該被膜の除去温度ま
で予熱しつつ、室内の気体を吸引除去して、該被膜中の
有機溶剤や低分子物質を除去した後に被膜を除去するこ
とにより、有機物被膜の除去のための処理室内壁等への
有機物の付着を減少させることが可能となり１、オゾン
の発生装置の運転を連続化することができ、生産性も向
上する。(Effect of the invention) In a method for removing an organic film from a substrate on which the organic film has been formed, the substrate on which the organic film has been formed is preheated to the removal temperature of the film, and the gas in the room is suctioned to remove the organic material in the film. By removing the film after removing the solvent and low-molecular substances, it is possible to reduce the adhesion of organic matter to the walls of the processing chamber for removal of the organic film.1, allowing continuous operation of the ozone generator. This also improves productivity.
第１図は、本発明の有機物の除去方法に用いる装置を示
す図である。。
１．２・・処理室
３、・・・基板支持装置
４、・・・半導体基板
５、・・・加熱装置
６、・・・オゾン供給管
７、・・・冷却管
８、φ会φノズル
９、・・・気体吸引管
１０、 ・・気体排出管
１１、・・オゾン発生装置
１２、・・切替装置
１３、・・切替装置
１４、・・気体吸引装置
１５、・・切替装置
Ｉｔ）、”７ソノ７ｆ＃＃ｉ［FIG. 1 is a diagram showing an apparatus used in the organic matter removal method of the present invention. . 1.2...Processing chamber 3,...Substrate support device 4,...Semiconductor substrate 5,...Heating device 6,...Ozone supply pipe 7,...Cooling pipe 8, φ-shaped φ nozzle 9, ... gas suction pipe 10, ... gas discharge pipe 11, ... ozone generator 12, ... switching device 13, ... switching device 14, ... gas suction device 15, ... switching device It), "7sono7f##i[
Claims (4)
方法において、該基板を有機物被膜を除去する処理室内
の気体を吸引除去しつつ加熱し、引き続き加熱下で、被
膜面にオゾンを噴射することを特徴とする有機物被膜の
除去方法。(1) In a method for removing an organic film from a substrate on which the organic film has been formed, the substrate is heated while removing the gas in the processing chamber in which the organic film is to be removed by suction, and then ozone is injected onto the surface of the film while being heated. A method for removing an organic film, characterized by the following.
機物被膜を加熱しつつ該処理室内の気体を吸引除去して
いる間に他の処理室において、被膜面にオゾンを噴射す
ることを特徴とする特許請求の範囲第１項に記載の有機
物被膜の除去方法。(2) A plurality of processing chambers are provided to remove the organic film, and while the organic film is being heated and the gas in the processing chamber is being suctioned and removed, ozone is injected onto the film surface in another processing chamber. A method for removing an organic film according to claim 1.
機物被膜を形成した基板を加熱しつつ気体を吸引除去し
た後に、該処理室においてオゾンを噴射することを特徴
とする特許請求の範囲第１項に記載の有機物被膜の除去
方法。(3) In a separate room from the processing chamber for removing the organic film, the substrate on which the organic film has been formed is heated and gas is removed by suction, and then ozone is injected in the processing chamber. The method for removing an organic film according to item 1.
することを特徴とする特許請求の範囲第１項ないし第３
項のいずれかに記載の有機物被膜の除去方法。(4) Claims 1 to 3, characterized in that a small amount of ozone is injected while the gas is being suctioned and removed.
The method for removing an organic film according to any of the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61244150A JPH0777189B2 (en) | 1986-10-16 | 1986-10-16 | Method of removing organic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61244150A JPH0777189B2 (en) | 1986-10-16 | 1986-10-16 | Method of removing organic film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6399529A true JPS6399529A (en) | 1988-04-30 |
| JPH0777189B2 JPH0777189B2 (en) | 1995-08-16 |
Family
ID=17114503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61244150A Expired - Lifetime JPH0777189B2 (en) | 1986-10-16 | 1986-10-16 | Method of removing organic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0777189B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH021866A (en) * | 1988-06-13 | 1990-01-08 | Hitachi Ltd | Resist removing device |
| US7244335B2 (en) | 2002-06-26 | 2007-07-17 | Tokyo Electron Limited | Substrate processing system and substrate processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5050869A (en) * | 1973-09-05 | 1975-05-07 | ||
| JPS5143079A (en) * | 1974-10-11 | 1976-04-13 | Hitachi Ltd | TAISHOKUSEIJUSHIMAKUJOKYOHO |
| JPS5147373A (en) * | 1974-10-22 | 1976-04-22 | Nippon Electric Co | Fuotorejisutomakuno jokyohoho |
| JPS5220766A (en) * | 1975-08-04 | 1977-02-16 | Texas Instruments Inc | Method of removing phtoresist layer and processing apparatus thereof |
-
1986
- 1986-10-16 JP JP61244150A patent/JPH0777189B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5050869A (en) * | 1973-09-05 | 1975-05-07 | ||
| JPS5143079A (en) * | 1974-10-11 | 1976-04-13 | Hitachi Ltd | TAISHOKUSEIJUSHIMAKUJOKYOHO |
| JPS5147373A (en) * | 1974-10-22 | 1976-04-22 | Nippon Electric Co | Fuotorejisutomakuno jokyohoho |
| JPS5220766A (en) * | 1975-08-04 | 1977-02-16 | Texas Instruments Inc | Method of removing phtoresist layer and processing apparatus thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH021866A (en) * | 1988-06-13 | 1990-01-08 | Hitachi Ltd | Resist removing device |
| US7244335B2 (en) | 2002-06-26 | 2007-07-17 | Tokyo Electron Limited | Substrate processing system and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0777189B2 (en) | 1995-08-16 |
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