JPS6398635U - - Google Patents
Info
- Publication number
- JPS6398635U JPS6398635U JP19414886U JP19414886U JPS6398635U JP S6398635 U JPS6398635 U JP S6398635U JP 19414886 U JP19414886 U JP 19414886U JP 19414886 U JP19414886 U JP 19414886U JP S6398635 U JPS6398635 U JP S6398635U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- energy
- circuit
- irradiated
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
Description
第１図はこの考案の一実施例である半導体デバ
イスの構成を示す概略図、第２図は、第１図の半
導体デバイスにおけるあらかじめ組み込まれた基
本回路の一例を示す回路図、第３図は従来から使
用されているプログラマブル・ロジツク・デバイ
スの構成の一例を示す概略図である。
図において、１……入力端子群、２……論理ゲ
ート、３……積項回路、４……和項回路、５……
出力端子群、１１……半導体ウエハ、１２……基
本回路、１３……エネルギー照射装置、１４……
溶断部である。なお、各図中、同一符号は同一、
又は相当部分を示す。
FIG. 1 is a schematic diagram showing the configuration of a semiconductor device that is an embodiment of this invention, FIG. 2 is a circuit diagram showing an example of a basic circuit pre-installed in the semiconductor device of FIG. 1, and FIG. 1 is a schematic diagram showing an example of the configuration of a conventionally used programmable logic device. In the figure, 1... input terminal group, 2... logic gate, 3... product term circuit, 4... sum term circuit, 5...
Output terminal group, 11... semiconductor wafer, 12... basic circuit, 13... energy irradiation device, 14...
This is the fusing part. In addition, in each figure, the same reference numerals are the same,
or a corresponding portion.
Claims (1)
おいて、外部より上記半導体ウエハにエネルギー
を直接に照射する手段と、この手段により照射さ
れたエネルギーにより特定の信号線を溶断させて
、所望の回路を得る手段とを備えたことを特徴と
する半導体デバイス。 In a semiconductor wafer on which a basic circuit has already been generated, the semiconductor wafer is directly irradiated with energy from the outside, and a specific signal line is melted by the energy irradiated by this means to obtain a desired circuit. A semiconductor device characterized by comprising means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19414886U JPS6398635U (en) | 1986-12-17 | 1986-12-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19414886U JPS6398635U (en) | 1986-12-17 | 1986-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6398635U true JPS6398635U (en) | 1988-06-25 |
Family
ID=31150849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19414886U Pending JPS6398635U (en) | 1986-12-17 | 1986-12-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6398635U (en) |
-
1986
- 1986-12-17 JP JP19414886U patent/JPS6398635U/ja active Pending