JPS639429B2 - - Google Patents
Info
- Publication number
- JPS639429B2 JPS639429B2 JP54149375A JP14937579A JPS639429B2 JP S639429 B2 JPS639429 B2 JP S639429B2 JP 54149375 A JP54149375 A JP 54149375A JP 14937579 A JP14937579 A JP 14937579A JP S639429 B2 JPS639429 B2 JP S639429B2
- Authority
- JP
- Japan
- Prior art keywords
- potential
- diode
- pulse
- electrode
- blooming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012546 transfer Methods 0.000 claims description 27
- 238000003384 imaging method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000001629 suppression Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 229920006395 saturated elastomer Polymers 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 208000024891 symptom Diseases 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14672—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14937579A JPS5672582A (en) | 1979-11-16 | 1979-11-16 | Solid-state image pickup device |
EP80304112A EP0029367B1 (de) | 1979-11-16 | 1980-11-14 | Festkörper-Bildaufnahmeapparat |
DE8080304112T DE3071469D1 (en) | 1979-11-16 | 1980-11-14 | Solid state imaging apparatus |
US06/408,776 US4500924A (en) | 1979-11-16 | 1982-08-17 | Solid state imaging apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14937579A JPS5672582A (en) | 1979-11-16 | 1979-11-16 | Solid-state image pickup device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5672582A JPS5672582A (en) | 1981-06-16 |
JPS639429B2 true JPS639429B2 (de) | 1988-02-29 |
Family
ID=15473751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14937579A Granted JPS5672582A (en) | 1979-11-16 | 1979-11-16 | Solid-state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5672582A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS585086A (ja) * | 1981-07-01 | 1983-01-12 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JPS58139465A (ja) * | 1982-02-15 | 1983-08-18 | Matsushita Electric Ind Co Ltd | 固体撮像素子の駆動方法 |
US4661830A (en) * | 1983-07-06 | 1987-04-28 | Matsushita Electric Industrial Co., Ltd. | Solid state imager |
-
1979
- 1979-11-16 JP JP14937579A patent/JPS5672582A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5672582A (en) | 1981-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0538886B1 (de) | Signalprozessor mit Lawinendioden | |
US4322753A (en) | Smear and/or blooming in a solid state charge transfer image pickup device | |
TW418533B (en) | Solid-state imaging device and optical signal detection method using the same | |
US5060042A (en) | Photoelectric conversion apparatus with reresh voltage | |
US4462047A (en) | Solid state imager with blooming suppression | |
US5619049A (en) | CCD-type solid state image pickup with overflow drain structure | |
US4688098A (en) | Solid state image sensor with means for removing excess photocharges | |
US10297625B2 (en) | Photoelectric conversion device and imaging system | |
US6445414B1 (en) | Solid-state image pickup device having vertical overflow drain and resistive gate charge transfer device and method of controlling thereof | |
US6642561B2 (en) | Solid imaging device and method for manufacturing the same | |
JPH05211321A (ja) | アバランシェフォトダイオード、及びそれを具備する信号処理装置 | |
US4500924A (en) | Solid state imaging apparatus | |
JPS5831669A (ja) | 固体撮像装置 | |
US4616249A (en) | Solid state image pick-up element of static induction transistor type | |
JP2809908B2 (ja) | 固体撮像素子 | |
JPS639429B2 (de) | ||
JPS5910269A (ja) | アンチブルーミング効果を有する光電装置 | |
US7067860B2 (en) | Solid-state imaging device | |
JPS6272281A (ja) | 撮像装置 | |
EP0029367B1 (de) | Festkörper-Bildaufnahmeapparat | |
JPS6058779A (ja) | 固体撮像装置 | |
Kohn | A charge-coupled infrared imaging array with Schottky-barrier detectors | |
JPS61294977A (ja) | 固体撮像装置の駆動方法 | |
JPS6148307B2 (de) | ||
JPH0347624B2 (de) |